Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films
- Shi, S.
- Schmerber, G.
- Arabski, J.
- Beaufrand, J.-B.
- Kim, D. J.
- Boukari, S.
- Bowen, M.
- Kemp, N. T.
- Viart, N.
- Rogez, G.
- Beaurepaire, E.
- Aubriet, H.
- Petersen, J.
- Becker, C.
- Ruch, D.
DOIAbstract
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)(2)(NCS)(2) (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10(-6) cm(2)/V s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminum organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes
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