Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well

The authors present room temperature photoluminescence and photocurrent measurements on a three layer GaAsNGaAs Al0.35 Ga0.65 As (N≤1%) stepped quantum well. A blueshift in the ground state transition energy is observed with the application of an electric field. A net blueshift of > 10 meV was obtained at 40 kVcm. These results suggest a type II band lineup in the GaAsNGaAs heterojunction for nitrogen compositions below 1%. © 2006 American Institute of Physics