Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec
The first phase of the work presented in this dissertation is the development of a scaleable process...
The first phase of the work presented in this dissertation is the development of a scaleable process...
We report the effect of an Al layer, covering the central part of the nanotube channel, on the elect...
A carbon nanotube (CNT) growth process on Hf02 is reported for the first time for application in nan...
A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nan...
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the ap...
Top-gated carbon nanotube field-effect transistors (CNT FETs) were fabricated by using ultra-thin (4...
Since the first integrated circuits in the late 1960’s, a constant improvement of their performances...
The present work comprises a novel method for selective growth of carbon nanotubes, study of their g...
AbstractThis paper deals with the fabrication of CNTFET obtained using carbon nanotube networks and ...
Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained consid...
Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics...
Abstract- Carbon Nanotube is one of the rising technologies within nano science, which is showing hi...
Carbon nanotubes (CNTs) can be utilized to replace Si as the pressure sensing element since they hav...
This paper presents direct growth of horizontally aligned carbon nanotubes (CNTs) between two predef...
The first phase of the work presented in this dissertation is the development of a scaleable process...
The first phase of the work presented in this dissertation is the development of a scaleable process...
We report the effect of an Al layer, covering the central part of the nanotube channel, on the elect...
A carbon nanotube (CNT) growth process on Hf02 is reported for the first time for application in nan...
A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nan...
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the ap...
Top-gated carbon nanotube field-effect transistors (CNT FETs) were fabricated by using ultra-thin (4...
Since the first integrated circuits in the late 1960’s, a constant improvement of their performances...
The present work comprises a novel method for selective growth of carbon nanotubes, study of their g...
AbstractThis paper deals with the fabrication of CNTFET obtained using carbon nanotube networks and ...
Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained consid...
Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics...
Abstract- Carbon Nanotube is one of the rising technologies within nano science, which is showing hi...
Carbon nanotubes (CNTs) can be utilized to replace Si as the pressure sensing element since they hav...
This paper presents direct growth of horizontally aligned carbon nanotubes (CNTs) between two predef...
The first phase of the work presented in this dissertation is the development of a scaleable process...
The first phase of the work presented in this dissertation is the development of a scaleable process...
We report the effect of an Al layer, covering the central part of the nanotube channel, on the elect...