Cubic boron nitride (c-BN) composites produced at high pressures and temperatures are widely used as cutting tool materials. The advent of new, effective pressure-assisted densification methods, such as spark plasma sintering (SPS), has stimulated attempts to produce these composites at low pressures. Under low-pressure conditions, however, transformation of c-BN to the soft hexagonal BN (h-BN) phase can occur, with a strong deterioration in hardness and wear. In the present work, the influence of secondary phases (B2O3, Si3N4, and oxide glasses) on the transformation of c-BN was studied in the temperature range between 1100 °C and 1575 °C. The different heat treated c-BN particles and c-BN composites were analyzed by SEM, X-ray diffraction...
Three types of hexagonal boron nitride (h-BN) with graphitic crystal structure having different micr...
h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride p...
h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride p...
Cubic boron nitride (c-BN) composites produced at high pressures and temperatures are widely used as...
Cubic boron nitride (c-BN) composites produced at high pressures and temperatures are widely used as...
Utilising SPS, fully dense α-Sialon ceramics were obtained during sintering at temperatures as low a...
Cubic boron nitride (c-BN) possesses excellent hardness, being the second hardest material after dia...
Cubic boron nitride (c-BN) possesses excellent hardness, being the second hardest material after dia...
Cubic boron nitride (c-BN) possesses excellent hardness, being the second hardest material after dia...
Boron nitride is one of the most important inorganic materials for many advanced technologies becaus...
Hot-pressing of a commercial silicon carbide powder was performed with 0, 5 and 10wt% added hexagona...
Hot-pressing of a commercial silicon carbide powder was performed with 0, 5 and 10wt% added hexagona...
The micrograph shows h-BN inclusion (precipitate) in a β-Si3N4 grain (within a silicon nitride parti...
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/66372/1/j.1151-2916.1999.tb02123.x.pd
The reactions that occur during sintering of polycrystalline cubic boron nitride composite (PCBN) to...
Three types of hexagonal boron nitride (h-BN) with graphitic crystal structure having different micr...
h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride p...
h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride p...
Cubic boron nitride (c-BN) composites produced at high pressures and temperatures are widely used as...
Cubic boron nitride (c-BN) composites produced at high pressures and temperatures are widely used as...
Utilising SPS, fully dense α-Sialon ceramics were obtained during sintering at temperatures as low a...
Cubic boron nitride (c-BN) possesses excellent hardness, being the second hardest material after dia...
Cubic boron nitride (c-BN) possesses excellent hardness, being the second hardest material after dia...
Cubic boron nitride (c-BN) possesses excellent hardness, being the second hardest material after dia...
Boron nitride is one of the most important inorganic materials for many advanced technologies becaus...
Hot-pressing of a commercial silicon carbide powder was performed with 0, 5 and 10wt% added hexagona...
Hot-pressing of a commercial silicon carbide powder was performed with 0, 5 and 10wt% added hexagona...
The micrograph shows h-BN inclusion (precipitate) in a β-Si3N4 grain (within a silicon nitride parti...
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/66372/1/j.1151-2916.1999.tb02123.x.pd
The reactions that occur during sintering of polycrystalline cubic boron nitride composite (PCBN) to...
Three types of hexagonal boron nitride (h-BN) with graphitic crystal structure having different micr...
h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride p...
h-BN particles were subjected to compressive stress in the (0001) planes (within a silicon nitride p...