The mechanisms whereby 60° misfit dislocations are generated from dissociated threading dislocations in quantum-well heterostructures are considered. The two partial dislocations experience different misfit stresses, resulting in each partial having a different critical thickness. As a consequence, a number of different dislocation configurations are predicted, including the possibility of producing stacking faults of infinite width. © 1994 The American Physical Societ
The formation, interaction, and propagation of misfit dislocations in molecular‐beam epitaxial InGaA...
Misfit dislocations generated from inhomogeneous sources in InGaAs/GaAs strained-layer heterostructu...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
This process was considered theoretically. By using elasticity theory, the corresponding critical th...
The onset of misfit dislocation generation is investigated and the critical thickness is determined ...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
In this work we model the evolution of strain energy during different growth stages of heterostructu...
The continuum theory of elastic dislocations is applied to estimate the critical thickness of a stra...
This paper will consider some fundamental questions concerning the source, nucleation and propagatio...
Continuum elastic theory is applied to the formation of misfit dislocations and point defects in str...
The formation of a misfit dislocation from a half circular dislocation loop originating at the (001)...
Inhomogeneous sources of misfit dislocation generation have been observed in InxGa1-xAs/GaAs straine...
AbstractA Somigliana dislocation dipole model is developed to determine the critical thickness for m...
The stability of strained-layer heterostructure lasers can be assessed by their response to stimuli ...
The formation, interaction, and propagation of misfit dislocations in molecular‐beam epitaxial InGaA...
Misfit dislocations generated from inhomogeneous sources in InGaAs/GaAs strained-layer heterostructu...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
This process was considered theoretically. By using elasticity theory, the corresponding critical th...
The onset of misfit dislocation generation is investigated and the critical thickness is determined ...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
The reliability of semiconductor devices depends upon the stability of the constituent materials. St...
In this work we model the evolution of strain energy during different growth stages of heterostructu...
The continuum theory of elastic dislocations is applied to estimate the critical thickness of a stra...
This paper will consider some fundamental questions concerning the source, nucleation and propagatio...
Continuum elastic theory is applied to the formation of misfit dislocations and point defects in str...
The formation of a misfit dislocation from a half circular dislocation loop originating at the (001)...
Inhomogeneous sources of misfit dislocation generation have been observed in InxGa1-xAs/GaAs straine...
AbstractA Somigliana dislocation dipole model is developed to determine the critical thickness for m...
The stability of strained-layer heterostructure lasers can be assessed by their response to stimuli ...
The formation, interaction, and propagation of misfit dislocations in molecular‐beam epitaxial InGaA...
Misfit dislocations generated from inhomogeneous sources in InGaAs/GaAs strained-layer heterostructu...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...