Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

We report the improved thermal stability of carbon alloyed Cu_0.6Te_0.4 for resistive memory applications. Copper–tellurium-based memory cells show enhanced switching behavior, but the complex sequence of phase transformations upon annealing is disadvantageous for integration in a device. We show that addition of about 40 at % carbon to the Cu-telluride layer results in an amorphous material up to 360 °C. This material was then integrated in a TiN/Cu_0.6Te_0.4-C/Al₂O₃/Si resistive memory cell, and compared to pure Cu_0.6Te_0.4. Very attractive endurance (up to 1 × 10³ cycles) and retention properties (up to 1 × 10⁴ s at 85 °C) are observed. The enhanced thermal stability and good switching behavior make this material a promising candidate for integration in memory devices