Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed
Si anisotropic etching is simulated on the atomic level with a simple algorithm (Monte Carlo method)...
Anisotropic wet bulk micromachining is a dominant technique used in microelectromechanical systems (...
Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch r...
A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH soluti...
We present a method to describe the orientation dependence of the etch rate in anisotropic etching s...
We present a method to describe the orientation dependence of the etch rate of silicon, or any other...
We present a method to describe the orientation dependence of the etch rate of silicon, or any other...
In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implemen...
Using the network etch rate function model, the anisotropic etch rate of p-type single crystal silic...
The anisotropic etching behavior of single-crystal silicon and the behavior of SiO2 and Si3N4 in an ...
The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a func...
Anisotropic etch rates of silicon in KOH solutions were studied as a function of an externally appli...
Anisotropic wet-chemical etching is a key technology in the fabrication of sensors and actuators bec...
We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical...
The success of silicon IC technology in producing a wide variety of microstructures relies heavily o...
Si anisotropic etching is simulated on the atomic level with a simple algorithm (Monte Carlo method)...
Anisotropic wet bulk micromachining is a dominant technique used in microelectromechanical systems (...
Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch r...
A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH soluti...
We present a method to describe the orientation dependence of the etch rate in anisotropic etching s...
We present a method to describe the orientation dependence of the etch rate of silicon, or any other...
We present a method to describe the orientation dependence of the etch rate of silicon, or any other...
In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implemen...
Using the network etch rate function model, the anisotropic etch rate of p-type single crystal silic...
The anisotropic etching behavior of single-crystal silicon and the behavior of SiO2 and Si3N4 in an ...
The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a func...
Anisotropic etch rates of silicon in KOH solutions were studied as a function of an externally appli...
Anisotropic wet-chemical etching is a key technology in the fabrication of sensors and actuators bec...
We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical...
The success of silicon IC technology in producing a wide variety of microstructures relies heavily o...
Si anisotropic etching is simulated on the atomic level with a simple algorithm (Monte Carlo method)...
Anisotropic wet bulk micromachining is a dominant technique used in microelectromechanical systems (...
Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch r...
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