Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films
International audienceC-doped Mn5Ge3 compound is ferromagnetic at temperature up to 430 K. Hence it ...
Under defined growth conditions ferromagnetic hexagonal Mn5Ge3 precipitates are formed in cubic Ge1-...
Self-assembled semiconducting nanowires (NW) are promising candidates to design and to fabricate new...
Mn behaviors in the Ge0.96Mn0.04 thin films grown on Si (001) substrates by molecular beam epitaxy w...
10 pages 2 colonnes revTex formattedWe report on the structural and magnetic properties of thin Ge(1...
We investigate the structural and morphological evolutions of Ge1-xMnx films, grown by molecular bea...
We present the first study relating structural parameters of precipitate-free Ge0.95Mn0.05 films to ...
The structural evolution and magnetic property of Mn-rich clusters in GeMn thin films grown at 70 °C...
Reflexion high-energy electron diffraction (RHEED), transmission electron microscopy (TEM) along wit...
We present a comprehensive study relating the nanostructure of Ge0.95Mn0.05 films to their magnetic ...
Structural properties of MnxGe1-x films grown by molecular beam epitaxy (MBE) have been investigated...
X-ray absorption spectroscopy of epitaxial GeMn thin films reveals an experimentally indistinguishab...
The growth of magnetic semiconductors with Curie temperature above room temperature is one of the ma...
International audienceIn this work, we have combined scanning tunneling microscopy (STM) with high-r...
Magnetic and structural properties of a Ge0.96Mn0.04 thin film grown on Si has been investigated by ...
International audienceC-doped Mn5Ge3 compound is ferromagnetic at temperature up to 430 K. Hence it ...
Under defined growth conditions ferromagnetic hexagonal Mn5Ge3 precipitates are formed in cubic Ge1-...
Self-assembled semiconducting nanowires (NW) are promising candidates to design and to fabricate new...
Mn behaviors in the Ge0.96Mn0.04 thin films grown on Si (001) substrates by molecular beam epitaxy w...
10 pages 2 colonnes revTex formattedWe report on the structural and magnetic properties of thin Ge(1...
We investigate the structural and morphological evolutions of Ge1-xMnx films, grown by molecular bea...
We present the first study relating structural parameters of precipitate-free Ge0.95Mn0.05 films to ...
The structural evolution and magnetic property of Mn-rich clusters in GeMn thin films grown at 70 °C...
Reflexion high-energy electron diffraction (RHEED), transmission electron microscopy (TEM) along wit...
We present a comprehensive study relating the nanostructure of Ge0.95Mn0.05 films to their magnetic ...
Structural properties of MnxGe1-x films grown by molecular beam epitaxy (MBE) have been investigated...
X-ray absorption spectroscopy of epitaxial GeMn thin films reveals an experimentally indistinguishab...
The growth of magnetic semiconductors with Curie temperature above room temperature is one of the ma...
International audienceIn this work, we have combined scanning tunneling microscopy (STM) with high-r...
Magnetic and structural properties of a Ge0.96Mn0.04 thin film grown on Si has been investigated by ...
International audienceC-doped Mn5Ge3 compound is ferromagnetic at temperature up to 430 K. Hence it ...
Under defined growth conditions ferromagnetic hexagonal Mn5Ge3 precipitates are formed in cubic Ge1-...
Self-assembled semiconducting nanowires (NW) are promising candidates to design and to fabricate new...