Total resistance versus zone XI/XIII length for two different gate voltages of 0.0 and 0.5 V, in the saturation region.

Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs

Tan, CH
Xu, MZ
Wang, JY
Xie, B
He, YD

January 1998

The proportional difference operator method is used to study the saturation characteristics of a lon...

Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

Yang, Xiaodong
Maitra, K.
Yeh, C.
Zeitzoff, P.
Raymond, M.
Kulkarni, P.
Wang, M.
Yamashita, T.
Basker, V. S.
Standaert, T. E.
Samavedam, S.

January 2011

A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is g...

Comparison of ablation zones between the statistical model and the EFT model (electric field strength in V/cm).

Yongji Yang (2061142)
Michael A. J. Moser (3165405)
Edwin Zhang (5142890)
Wenjun Zhang (685002)
Bing Zhang (129)

April 2018

Comparison of ablation zones between the statistical model and the EFT model (electric field stre...

Variation of transconductance (gm) (a), plot of the ratio of the drain current to the square root of the transconductance (ID/gm0.5) (b) and gm/ID versus gate voltage (c) for three different thicknesses (20, 40, and 100 nm) in saturation (VD = −1.0 V).

Farhad Larki (420187)
Arash Dehzangi (420186)
Sawal Hamid Md Ali (553536)
Azman Jalar (553537)
Md. Shabiul Islam (553538)
Mohd Nizar Hamidon (553539)
Burhanuddin Yeop Majlis (553540)

April 2014

Variation of transconductance (gm) (a), plot of the ratio of the drain current to the ...

Transfer characteristics (ID–VG) (a) and drain conductance as a function of drain voltage (b), for different zones XI/XIII length at VG = 0.5 V.

Farhad Larki (420187)
Arash Dehzangi (420186)
Sawal Hamid Md Ali (553536)
Azman Jalar (553537)
Md. Shabiul Islam (553538)
Mohd Nizar Hamidon (553539)
Burhanuddin Yeop Majlis (553540)

April 2014

Zones XI and XIII have the length of 500, 1000, and 2000 nm. The length of ...

Id-Vg characteristics (a) and Transconductance vs gate voltage (b) for In0.53Ga 0.47As MOSFETs with different Lg for low drain voltage (Vd = 50 mV, T = 300 K).

Mohd F. Mohd Razip Wee (499129)
Arash Dehzangi (420186)
Sylvain Bollaert (499130)
Nicolas Wichmann (499131)
Burhanuddin Y. Majlis (420190)

December 2013

Id-Vg characteristics (a) and Transconductance vs gate voltage (b) for In<s...

Modelling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors

Wong, W. W.
Liou, J. J.

January 1992

The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are infl...

Dependency of the devices' characteristics to the scaling of thickness and zones XI/XIII length.

Farhad Larki (420187)
Arash Dehzangi (420186)
Sawal Hamid Md Ali (553536)
Azman Jalar (553537)
Md. Shabiul Islam (553538)
Mohd Nizar Hamidon (553539)
Burhanuddin Yeop Majlis (553540)

April 2014

Dependency of the devices' characteristics to the scaling of thickness and zones XI/X<...

Demo 17-18 Resistance Wires

The resistance of a wire is directly proportional to its length and its resistivity, and inversely p...

A new method of determining the effective channel width and its dependence on the gate voltage

Karlsson, Peter R.
Jeppson, Kjell
Bogren, Anders

January 1996

A novel and simple method for the extraction of the effective channel width and its dependence on th...

Gate current (a) and field effect mobility (b) versus Vg for different Lg for self-aligned In0.53Ga 0.47As MOSFETs.

Mohd F. Mohd Razip Wee (499129)
Arash Dehzangi (420186)
Sylvain Bollaert (499130)
Nicolas Wichmann (499131)
Burhanuddin Y. Majlis (420190)

December 2013

Gate current (a) and field effect mobility (b) versus Vg for different Lg f...

The parameters governing the rate constants for the gating variables of the voltage gated channels in the dIN model.

Michael J. Hull (2178500)
Stephen R. Soffe (525731)
David J. Willshaw (384266)
Alan Roberts (36379)

May 2015

The parameters governing the rate constants for the gating variables of the voltage gated channel...

Effect of resist sensitivity ratio on T-gate fabrication

Chen, Y.
Macintyre, D.S.
Thoms, S.

January 2001

The need for short length T gates with good process control is demanding because pattern resolution ...

Modeling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors

January 1992

The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are infl...

Threshold voltages (Vth) vs Lg comparison extracted by different methods.

Mohd F. Mohd Razip Wee (499129)
Arash Dehzangi (420186)
Sylvain Bollaert (499130)
Nicolas Wichmann (499131)
Burhanuddin Y. Majlis (420190)

December 2013

Threshold voltages (Vth) vs Lg comparison extracted by different methods.</...

Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs

Tan, CH
Xu, MZ
Wang, JY
Xie, B
He, YD

January 1998

The proportional difference operator method is used to study the saturation characteristics of a lon...

Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

Yang, Xiaodong
Maitra, K.
Yeh, C.
Zeitzoff, P.
Raymond, M.
Kulkarni, P.
Wang, M.
Yamashita, T.
Basker, V. S.
Standaert, T. E.
Samavedam, S.

January 2011

A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is g...

Comparison of ablation zones between the statistical model and the EFT model (electric field strength in V/cm).

Yongji Yang (2061142)
Michael A. J. Moser (3165405)
Edwin Zhang (5142890)
Wenjun Zhang (685002)
Bing Zhang (129)

April 2018

Comparison of ablation zones between the statistical model and the EFT model (electric field stre...

Variation of transconductance (gm) (a), plot of the ratio of the drain current to the square root of the transconductance (ID/gm0.5) (b) and gm/ID versus gate voltage (c) for three different thicknesses (20, 40, and 100 nm) in saturation (VD = −1.0 V).

Farhad Larki (420187)
Arash Dehzangi (420186)
Sawal Hamid Md Ali (553536)
Azman Jalar (553537)
Md. Shabiul Islam (553538)
Mohd Nizar Hamidon (553539)
Burhanuddin Yeop Majlis (553540)

April 2014

Variation of transconductance (gm) (a), plot of the ratio of the drain current to the ...

Transfer characteristics (ID–VG) (a) and drain conductance as a function of drain voltage (b), for different zones XI/XIII length at VG = 0.5 V.

Farhad Larki (420187)
Arash Dehzangi (420186)
Sawal Hamid Md Ali (553536)
Azman Jalar (553537)
Md. Shabiul Islam (553538)
Mohd Nizar Hamidon (553539)
Burhanuddin Yeop Majlis (553540)

April 2014

Zones XI and XIII have the length of 500, 1000, and 2000 nm. The length of ...

Id-Vg characteristics (a) and Transconductance vs gate voltage (b) for In0.53Ga 0.47As MOSFETs with different Lg for low drain voltage (Vd = 50 mV, T = 300 K).

Mohd F. Mohd Razip Wee (499129)
Arash Dehzangi (420186)
Sylvain Bollaert (499130)
Nicolas Wichmann (499131)
Burhanuddin Y. Majlis (420190)

December 2013

Id-Vg characteristics (a) and Transconductance vs gate voltage (b) for In<s...

Modelling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors

Wong, W. W.
Liou, J. J.

January 1992

The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are infl...

Dependency of the devices' characteristics to the scaling of thickness and zones XI/XIII length.

Farhad Larki (420187)
Arash Dehzangi (420186)
Sawal Hamid Md Ali (553536)
Azman Jalar (553537)
Md. Shabiul Islam (553538)
Mohd Nizar Hamidon (553539)
Burhanuddin Yeop Majlis (553540)

April 2014

Dependency of the devices' characteristics to the scaling of thickness and zones XI/X<...

Demo 17-18 Resistance Wires

The resistance of a wire is directly proportional to its length and its resistivity, and inversely p...

A new method of determining the effective channel width and its dependence on the gate voltage

Karlsson, Peter R.
Jeppson, Kjell
Bogren, Anders

January 1996

A novel and simple method for the extraction of the effective channel width and its dependence on th...

Gate current (a) and field effect mobility (b) versus Vg for different Lg for self-aligned In0.53Ga 0.47As MOSFETs.

Mohd F. Mohd Razip Wee (499129)
Arash Dehzangi (420186)
Sylvain Bollaert (499130)
Nicolas Wichmann (499131)
Burhanuddin Y. Majlis (420190)

December 2013

Gate current (a) and field effect mobility (b) versus Vg for different Lg f...

The parameters governing the rate constants for the gating variables of the voltage gated channels in the dIN model.

Michael J. Hull (2178500)
Stephen R. Soffe (525731)
David J. Willshaw (384266)
Alan Roberts (36379)

May 2015

The parameters governing the rate constants for the gating variables of the voltage gated channel...

Effect of resist sensitivity ratio on T-gate fabrication

Chen, Y.
Macintyre, D.S.
Thoms, S.

January 2001

The need for short length T gates with good process control is demanding because pattern resolution ...

Modeling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors

January 1992

The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are infl...

Threshold voltages (Vth) vs Lg comparison extracted by different methods.

Mohd F. Mohd Razip Wee (499129)
Arash Dehzangi (420186)
Sylvain Bollaert (499130)
Nicolas Wichmann (499131)
Burhanuddin Y. Majlis (420190)

December 2013

Threshold voltages (Vth) vs Lg comparison extracted by different methods.</...

Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs

Tan, CH
Xu, MZ
Wang, JY
Xie, B
He, YD

January 1998

The proportional difference operator method is used to study the saturation characteristics of a lon...

Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

Yang, Xiaodong
Maitra, K.
Yeh, C.
Zeitzoff, P.
Raymond, M.
Kulkarni, P.
Wang, M.
Yamashita, T.
Basker, V. S.
Standaert, T. E.
Samavedam, S.

January 2011

A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is g...

Comparison of ablation zones between the statistical model and the EFT model (electric field strength in V/cm).

Yongji Yang (2061142)
Michael A. J. Moser (3165405)
Edwin Zhang (5142890)
Wenjun Zhang (685002)
Bing Zhang (129)

April 2018

Comparison of ablation zones between the statistical model and the EFT model (electric field stre...

Total resistance versus zone X<sub>I</sub>/X<sub>III</sub> length for two different gate voltages of 0.0 and 0.5 V, in the saturation region.

Abstract

Extracted data

Total resistance versus zone X<sub>I</sub>/X<sub>III</sub> length for two different gate voltages of 0.0 and 0.5 V, in the saturation region.

Abstract

Extracted data

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