Al₂O₃/TiO₂ Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition

Organic electronic devices require a passivation layer that protects the active layers from moisture and oxygen because most organic materials are very sensitive to such gases. Passivation films for the encapsulation of organic electronic devices need excellent stability and mechanical properties. Although Al₂O₃ films obtained with plasma enhanced atomic layer deposition (PEALD) have been tested as passivation layers because of their excellent gas barrier properties, amorphous Al₂O₃ films are significantly corroded by water. In this study, we examined the deformation of PEALD Al₂O₃ films when immersed in water and attempted to fabricate a corrosion-resistant passivation film by using a PEALD-based Al₂O₃/TiO₂ nanolamination (NL) technique. Our Al₂O₃/TiO₂ NL films were found to exhibit excellent water anticorrosion and low gas permeation and require only low-temperature processing (