We present a new Short-Open-Load-Thru (SOLT) calibration method for on-wafer S-parameter measurements. The new calibration method is based on a 10-term error model which is a simplified version of the 16-term error model. Compared with the latter, the former ignores all signal leakages except the ones between the probes. Experimental results show that this is valid for modern vector network analyzers (VNA). The advantage of using this 10-term error model is that the exact values of all error terms can be obtained by using the same calibration standards as the conventional SOLT method. This avoids not only the singularity problem with approximate methods, such as least squares, but also the usage of additional calibration standards. In this ...
In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk ...
In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk ...
The development, modelling and characterization of millimeter-wave semiconductor devices calls for a...
We present a new Short-Open-Load-Thru (SOLT) calibration method for on-wafer S-parameter measurement...
In this article, we present a two-port on-wafer scattering parameter measurement method to tackle th...
This article presents an advanced calibration method for solving the error terms due to probe–probe ...
A new solution for multiport vector network analyzer calibration is presented in this paper. The err...
An improved Short-Open-Load-Thru (SOLT) on-wafer vector network calibration method for broad-band ac...
An improved Short-Open-Load-Thru (SOLT) on-wafer vector network calibration method for broad-band ac...
An improved Short-Open-Load-Thru (SOLT) on-wafer vector network calibration method for broad-band ac...
This talk will review the causes of crosstalk in on-wafer measurements and discuss the conventional ...
This talk will review the causes of crosstalk in on-wafer measurements and discuss the conventional ...
The crosstalk or leakage between probes may cause significant errors and uncertainties for on-wafer ...
A new algorithm for network analyzer calibration is presented. The error model includes leakage effe...
Vector network measurements are enhanced by calibrating the measurement system over the entire band ...
In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk ...
In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk ...
The development, modelling and characterization of millimeter-wave semiconductor devices calls for a...
We present a new Short-Open-Load-Thru (SOLT) calibration method for on-wafer S-parameter measurement...
In this article, we present a two-port on-wafer scattering parameter measurement method to tackle th...
This article presents an advanced calibration method for solving the error terms due to probe–probe ...
A new solution for multiport vector network analyzer calibration is presented in this paper. The err...
An improved Short-Open-Load-Thru (SOLT) on-wafer vector network calibration method for broad-band ac...
An improved Short-Open-Load-Thru (SOLT) on-wafer vector network calibration method for broad-band ac...
An improved Short-Open-Load-Thru (SOLT) on-wafer vector network calibration method for broad-band ac...
This talk will review the causes of crosstalk in on-wafer measurements and discuss the conventional ...
This talk will review the causes of crosstalk in on-wafer measurements and discuss the conventional ...
The crosstalk or leakage between probes may cause significant errors and uncertainties for on-wafer ...
A new algorithm for network analyzer calibration is presented. The error model includes leakage effe...
Vector network measurements are enhanced by calibrating the measurement system over the entire band ...
In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk ...
In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk ...
The development, modelling and characterization of millimeter-wave semiconductor devices calls for a...