A theory of operation of transistorized Marx bank circuits has been formulated. It has been shown quantitatively that the current-mode second breakdown of transistors is the basic phenomenon involved. The analysis reveals that physical parameters, like the length of and the doping density in the epitaxial collector, the forward dc amplification factor, and the avalanche multiplication gain of the transistors, play important roles in the mechanism. The theory has been applied to explain a number of experimentally observed characteristics of the circuit
© Published under licence by IOP Publishing Ltd. The paper describes Marx topology using MOSFET tran...
Abst rac t--A device oriented model is developed to describe the operation of the junction-gate fiel...
This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for...
The principle of operation of the transistor-based Marx bank circuit has been examined. It was exper...
It is shown that the avalanche multiplication factor of transistors, which plays a key role in the f...
Abstract A traditional Marx circuit (TMC) based on avalanche transistors with a shortened emitter a...
A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, ...
Thesis (M.A.)--Boston UniversityThe Transistor is a new device employing a semi-conductor base mater...
In this paper, the properties of the power M.O.S.T. output resistance are analysed. Two mechanisms h...
Junction Transistors explains the operation and characterization of junction transistors to a point ...
This paper describes an exact circuit analogue of the theoretical expression for the current amplifi...
This paper describes the mechanisms inducing the 2nd breakdown in M.O.S. transistors, Le. when the d...
The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface a...
Includes bibliographical references.Includes illustrations.In 1948 the first transistor was develope...
© Published under licence by IOP Publishing Ltd. The paper describes Marx topology using MOSFET tran...
© Published under licence by IOP Publishing Ltd. The paper describes Marx topology using MOSFET tran...
Abst rac t--A device oriented model is developed to describe the operation of the junction-gate fiel...
This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for...
The principle of operation of the transistor-based Marx bank circuit has been examined. It was exper...
It is shown that the avalanche multiplication factor of transistors, which plays a key role in the f...
Abstract A traditional Marx circuit (TMC) based on avalanche transistors with a shortened emitter a...
A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, ...
Thesis (M.A.)--Boston UniversityThe Transistor is a new device employing a semi-conductor base mater...
In this paper, the properties of the power M.O.S.T. output resistance are analysed. Two mechanisms h...
Junction Transistors explains the operation and characterization of junction transistors to a point ...
This paper describes an exact circuit analogue of the theoretical expression for the current amplifi...
This paper describes the mechanisms inducing the 2nd breakdown in M.O.S. transistors, Le. when the d...
The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface a...
Includes bibliographical references.Includes illustrations.In 1948 the first transistor was develope...
© Published under licence by IOP Publishing Ltd. The paper describes Marx topology using MOSFET tran...
© Published under licence by IOP Publishing Ltd. The paper describes Marx topology using MOSFET tran...
Abst rac t--A device oriented model is developed to describe the operation of the junction-gate fiel...
This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for...