Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

Magnetization-based memories, <i>e.g.</i>, hard drive and magnetoresistive random-access memory (MRAM), use bistable magnetic domains in patterned nanomagnets for information recording. Electric field (<i>E</i>) tunable magnetic anisotropy can lower the energy barrier between two distinct magnetic states, promising reduced power consumption and increased recording density. However, integration of magnetoelectric heterostructure into MRAM is a highly challenging task owing to the particular architecture requirements of each component. Here, we show an epitaxial growth of self-assembled CoFe₂O₄ nanostripes with bistable in-plane magnetizations on Pb(Mg,Nb)O₃–PbTiO₃ (PMN–PT) substrates, where the magnetic switching can be triggered by <i>E</i>-induced elastic strain effect. An unprecedented magnetic coercive field change of up to 600 Oe was observed with increasing <i>E</i>. A near 180° magnetization rotation can be activated by <i>E</i> in the vicinity of the magnetic coercive field. These findings might help to solve the 1/2-selection problem in traditional MRAM by providing reduced magnetic coercive field in <i>E</i> field selected memory cells