The Preparation of BN-Doped Atomic Layer Graphene via Plasma Treatment and Thermal Annealing

We report a new method for the codoping of boron and nitrogen in a monolayer graphene film. After the CVD synthesis of monolayer graphene, BN-doped graphene is prepared by performing power-controlled plasma treatment and thermal annealing with borazine. BN-doped graphene films with various doping levels, which were controlled by altering the plasma treatment power, were found with Raman and electrical measurements to investigate exhibit p-doping behavior. Transmission electron microscopy, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy were used to demonstrate that the synthesized BN-doped graphene films have a sp² hybridized hexagonal structure. This approach to tuning the distribution and doping levels of boron and nitrogen in monolayer sp² hybridized BN-doped graphene is expected to be very useful for applications requiring large-area graphene with an opened band gap