This letter investigates the structural changes in monocrystalline silicon caused by microindentation with the aid of the high-resolution transmission electron microscopy. It shows that the transformation zone is amorphous when the maximum indentation load, P-max, is low, but a crystalline phase of high-pressure R8/BC8 can appear when P-max increases. The nanodeformation of the pristine silicon outside the transformation zone proceeds with the mechanical bending and distortion of the crystalline planes. Certain extent of plastic deformation took place due to dislocation slipping. The results seem to indicate that the shear stress component played an important role in the deformation of the transformation zone. (C) 2003 American Institute of...
The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical ...
Silicon (Si) is the backbone of the semiconductor industry. The widespread use of Si is largely...
Nanoindentation tests were performed on a ductile-machined silicon wafer with a Berkovich diamond in...
This study analyses the microstructure of monocrystalline silicon after indentation with a Berkovich...
Different amorphous structures have been induced in monocrystalline silicon by high pressure in inde...
Phase transformations induced by indentation at different unloading rates have been studied in cryst...
Nanoindentation-induced formation of high pressure crystalline phases (Si-III and Si-XII) during unl...
The characterization of silicon structure at nanometre-scale is an important issue as nano-tribology...
This paper explores the evolution mechanisms of metastable phases during the nanoindentation on mono...
High temperature nanoindentation has been performed on pure ion-implanted amorphous silicon (unrelax...
Silicon in its diamond-cubic phase is known to phase transform to a technologically interesting mixt...
Deformation during spherical and pointed indentation in (100) crystalline silicon using a UMIS-2000 ...
Silicon has long been the most important material in semiconductor technology, having a huge impact ...
Journal of Materials Research, 19(10): pp. 3099-3108. Retrieved September 19, 2006 from http://nano....
This paper presents novel advances in the deformation behaviour of polycrystalline and single crysta...
The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical ...
Silicon (Si) is the backbone of the semiconductor industry. The widespread use of Si is largely...
Nanoindentation tests were performed on a ductile-machined silicon wafer with a Berkovich diamond in...
This study analyses the microstructure of monocrystalline silicon after indentation with a Berkovich...
Different amorphous structures have been induced in monocrystalline silicon by high pressure in inde...
Phase transformations induced by indentation at different unloading rates have been studied in cryst...
Nanoindentation-induced formation of high pressure crystalline phases (Si-III and Si-XII) during unl...
The characterization of silicon structure at nanometre-scale is an important issue as nano-tribology...
This paper explores the evolution mechanisms of metastable phases during the nanoindentation on mono...
High temperature nanoindentation has been performed on pure ion-implanted amorphous silicon (unrelax...
Silicon in its diamond-cubic phase is known to phase transform to a technologically interesting mixt...
Deformation during spherical and pointed indentation in (100) crystalline silicon using a UMIS-2000 ...
Silicon has long been the most important material in semiconductor technology, having a huge impact ...
Journal of Materials Research, 19(10): pp. 3099-3108. Retrieved September 19, 2006 from http://nano....
This paper presents novel advances in the deformation behaviour of polycrystalline and single crysta...
The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical ...
Silicon (Si) is the backbone of the semiconductor industry. The widespread use of Si is largely...
Nanoindentation tests were performed on a ductile-machined silicon wafer with a Berkovich diamond in...