Add to ORKGA number of methods for investigating the structure and composition of quantum dots are discussed, with particular emphasis on the modelling of QD compositional profiles. It is shown that the method of on-zone Bright field TEM imaging is sensitive to composition profiles, and the technique has been applied to alloy profiles in the Ge/Si and InGaAs/GaAs systems. Combining this technique with energy filtered imaging and x-ray profiles results in a refined QD growth model
Quantum dots have sparked a remarkable amount of interest in device development and the understandin...
In this study, the significant effect of the nonuniform composition in alloy quantum dots (QDs) on e...
We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dot...
A number of methods for investigating the structure and composition of quantum dots are discussed, w...
Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectron...
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results o...
We present a transmission electron microscope (TEM) analysis of InAs/GaAs quantum dots (QDs) which h...
The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a c...
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov qua...
due to their special mechanical, electrical and optical behavior. The correlation between these extr...
Scanning transmission electron microscopy (STEM) and energy dispersive X-ray analysis (EDX) have bee...
Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively...
The aims of the work were: to construct an equipment for QD sample characterization by surface photo...
This study compares cross-sectional scanning tunneling microscopy and atom probe tomography. We use ...
Alloying has been identified as an important mode of strain relief in quantum dot (QD) systems. We h...
Quantum dots have sparked a remarkable amount of interest in device development and the understandin...
In this study, the significant effect of the nonuniform composition in alloy quantum dots (QDs) on e...
We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dot...
A number of methods for investigating the structure and composition of quantum dots are discussed, w...
Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectron...
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results o...
We present a transmission electron microscope (TEM) analysis of InAs/GaAs quantum dots (QDs) which h...
The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a c...
We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov qua...
due to their special mechanical, electrical and optical behavior. The correlation between these extr...
Scanning transmission electron microscopy (STEM) and energy dispersive X-ray analysis (EDX) have bee...
Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively...
The aims of the work were: to construct an equipment for QD sample characterization by surface photo...
This study compares cross-sectional scanning tunneling microscopy and atom probe tomography. We use ...
Alloying has been identified as an important mode of strain relief in quantum dot (QD) systems. We h...
Quantum dots have sparked a remarkable amount of interest in device development and the understandin...
In this study, the significant effect of the nonuniform composition in alloy quantum dots (QDs) on e...
We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dot...