Radio Frequency Transistors and Circuits Based on CVD MoS₂

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS₂ field-effect transistors (FETs). Initial DC characterizations of fabricated MoS₂ FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm²/(V s) was achieved. Radio frequency FETs were fabricated in the ground–signal–ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, <i>f</i>_T, of 6.7 GHz and maximum intrinsic oscillation frequency, <i>f</i>_max, of 5.3 GHz for a device with a gate length of 250 nm. The MoS₂ device afforded an extrinsic voltage gain <i>A</i>_v of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS₂, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of −15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS₂ may be suitable for industrial-scale electronic applications