Growth mechanism of truncated triangular GaAs nanowires
- Zou, J.
- Wang, H.
- Auchterlonie, G. J.
- Paladugu, M.
- Gao, Y. N.
- Kim, Y.
- Joyce, H. J.
- Tan, H.
- Jagadish, C.
Publication date
January 2006
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires
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