The role of carbon on the electrical properties of polycrystalline Si1-y-Cy and Si0.82-yGe0.18Cy films
- Anteney, I.M.
- Parker, G.J.
- Ashburn, P.
- Kemhadjian, H.A.
Publication date
December 2001
DOI ISSN
0021-8979 Language
English Citation count (estimate)
1Abstract
A comparison is made of the electrical effects of carbon in n and p type in situ doped polycrystalline Si1-yCy and Si0.82-ySi0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported
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