We demonstrate a simple method for the visualization of trajectories traced by noble metal nanoparticles during metal-assisted chemical etching (MaCE) of Si. The nanoporous Si layer formed around drilled pores is converted into SiO<sub>2</sub> by simple chemical oxidation. Etch removal of the remaining Si using alkali hydroxide leaves SiO<sub>2</sub> nanostructures that are the exact replica of those drilled pores or etching trajectories. The differences in etching characteristics between Ag and Au have been investigated using the proposed visualization method. The shape and chemical stability of metal nanoparticles used for MaCE have been found to be critical in determining etching paths. The proposed method would be very helpful in studyi...
The charge transport mechanism during metal-assisted chemical etching of Si nanowires with contiguou...
Nanoporous membranes are an interesting approach to manufacture a variety of devices for different a...
The etching of silicon in fluoride solutions is limited by the kinetics of charge transfer not therm...
Recently, metal-assisted chemical etching (MaCE) has been proposed as a promising method for micro- ...
Metal-assisted catalytic etching (MACE) using Ag nanoparticles as catalysts and H2O2 as oxidant has ...
We demonstrate controlled fabrication of porous Si (PS) and vertically aligned silicon nanowires arr...
Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled a...
International audienceMetal Assisted Chemical Etching (MACE) of Si has attracted the attention of ac...
Metal-assisted chemical etching as an anisotropic wet etching method is an important step in semicon...
This diploma thesis deals with the investigation of the metal-assisted catalytic etching (MaCE) of S...
Nanostructuration unfolds exciting vistas for the well-established Si industry. The exceptional prop...
International audience— New Si processes based on Metal Assisted Chemical Etching (MACE) are explore...
High-aspect ratio silicon (Si) nanostructures are important for many applications. Metal-assisted ch...
This article presents a study on Metal-Assisted Chemical Etching (MACE) of silicon in HF-H2O2 using ...
The considerable interest in nanomaterials and nanotechnology over the last decade is attributed to ...
The charge transport mechanism during metal-assisted chemical etching of Si nanowires with contiguou...
Nanoporous membranes are an interesting approach to manufacture a variety of devices for different a...
The etching of silicon in fluoride solutions is limited by the kinetics of charge transfer not therm...
Recently, metal-assisted chemical etching (MaCE) has been proposed as a promising method for micro- ...
Metal-assisted catalytic etching (MACE) using Ag nanoparticles as catalysts and H2O2 as oxidant has ...
We demonstrate controlled fabrication of porous Si (PS) and vertically aligned silicon nanowires arr...
Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled a...
International audienceMetal Assisted Chemical Etching (MACE) of Si has attracted the attention of ac...
Metal-assisted chemical etching as an anisotropic wet etching method is an important step in semicon...
This diploma thesis deals with the investigation of the metal-assisted catalytic etching (MaCE) of S...
Nanostructuration unfolds exciting vistas for the well-established Si industry. The exceptional prop...
International audience— New Si processes based on Metal Assisted Chemical Etching (MACE) are explore...
High-aspect ratio silicon (Si) nanostructures are important for many applications. Metal-assisted ch...
This article presents a study on Metal-Assisted Chemical Etching (MACE) of silicon in HF-H2O2 using ...
The considerable interest in nanomaterials and nanotechnology over the last decade is attributed to ...
The charge transport mechanism during metal-assisted chemical etching of Si nanowires with contiguou...
Nanoporous membranes are an interesting approach to manufacture a variety of devices for different a...
The etching of silicon in fluoride solutions is limited by the kinetics of charge transfer not therm...