This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimenal research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved
We report the fabrication and electron transport investigation of individual local-gated single-wall...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
One of the biggest limitations of conventional carbon nanotube device fabrication techniques is the ...
This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing ...
The large-scale assembly and fabrication method for single-walled carbon nanotube (SWCNT) nano devic...
The large-scale assembly and fabrication method for single-walled carbon nanotube (SWCNT) nano devic...
Single-wall carbon nanotubes are candidates for a number of building blocks in nanoscale electronics...
On account of their sizes and unique properties,single-wall carbon nanotubes are candidates for a nu...
In the process of fabricating nano electrical device or system based on single-walled carbon nanotub...
In the process of fabricating nano electrical device or system based on single-walled carbon nanotub...
An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effe...
In the process of fabricating nano electrical device or system based on single-walled carbon nanotub...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained consid...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
One of the biggest limitations of conventional carbon nanotube device fabrication techniques is the ...
This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing ...
The large-scale assembly and fabrication method for single-walled carbon nanotube (SWCNT) nano devic...
The large-scale assembly and fabrication method for single-walled carbon nanotube (SWCNT) nano devic...
Single-wall carbon nanotubes are candidates for a number of building blocks in nanoscale electronics...
On account of their sizes and unique properties,single-wall carbon nanotubes are candidates for a nu...
In the process of fabricating nano electrical device or system based on single-walled carbon nanotub...
In the process of fabricating nano electrical device or system based on single-walled carbon nanotub...
An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effe...
In the process of fabricating nano electrical device or system based on single-walled carbon nanotub...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained consid...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
We report the fabrication and electron transport investigation of individual local-gated single-wall...
One of the biggest limitations of conventional carbon nanotube device fabrication techniques is the ...