In this work, we demonstrate the capabilities of atomic force microscopies (AFMs) for the nondestructive determination of the polarity of GaN nanowires (NWs). Three complementary AFMs are analyzed here: Kelvin probe force microscopy (KPFM), light-assisted KPFM, and piezo-force microscopy (PFM). These techniques allow us to assess the polarity of individual NWs over an area of tens of μm<sup>2</sup> and provide statistics on the polarity of the ensemble with an accuracy hardly reachable by other methods. The precise quantitative analysis of the tip–sample interaction by multidimensional spectroscopic measurements, combined with advanced data analysis, has allowed the separate characterization of electrostatic and van der Waals forces as a fu...
Inversion domains in III-nitride semiconductors degrade the performance of devicesfabricated in them...
This thesis discusses a variety of techniques based on the atomic force microscope (AFM), and their ...
International audienceIt is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nu...
The crystal polarity of noncentrosymmetric wurtzite GaN nanowires is determined nondestructively in ...
The crystal polarity of non-centrosymmetric wurtzite GaN nanowires is determined non-destructively i...
International audienceWe present an improved atomic force microscopy (AFM) method to study the piezo...
We have studied molecular beam epitaxy grown GaN films of both polarities using electric force micro...
International audienceWe investigate the piezoelectric generation properties of GaN nanowires (NWs) ...
The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezores...
Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark f...
*S Supporting Information ABSTRACT: Aberration corrected scanning transmission electron microscopy (...
Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark f...
Stress induced piezoelectric fields in III-nitride semiconductors induce charge at the surface that ...
Piezoelectric constants and polarity distributions of epitaxial AlN and GaN thin films are investiga...
Ce travail de thèse consiste à étudier l'instrumentation de la sonde de Kelvin (KFM) sur un microsco...
Inversion domains in III-nitride semiconductors degrade the performance of devicesfabricated in them...
This thesis discusses a variety of techniques based on the atomic force microscope (AFM), and their ...
International audienceIt is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nu...
The crystal polarity of noncentrosymmetric wurtzite GaN nanowires is determined nondestructively in ...
The crystal polarity of non-centrosymmetric wurtzite GaN nanowires is determined non-destructively i...
International audienceWe present an improved atomic force microscopy (AFM) method to study the piezo...
We have studied molecular beam epitaxy grown GaN films of both polarities using electric force micro...
International audienceWe investigate the piezoelectric generation properties of GaN nanowires (NWs) ...
The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezores...
Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark f...
*S Supporting Information ABSTRACT: Aberration corrected scanning transmission electron microscopy (...
Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark f...
Stress induced piezoelectric fields in III-nitride semiconductors induce charge at the surface that ...
Piezoelectric constants and polarity distributions of epitaxial AlN and GaN thin films are investiga...
Ce travail de thèse consiste à étudier l'instrumentation de la sonde de Kelvin (KFM) sur un microsco...
Inversion domains in III-nitride semiconductors degrade the performance of devicesfabricated in them...
This thesis discusses a variety of techniques based on the atomic force microscope (AFM), and their ...
International audienceIt is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nu...