The demand for high-density memory in tandem with limitations imposed by the minimum feature size of current storage devices has created a need for new materials that can store information in smaller volumes than currently possible. Successfully employed in commercial optical data storage products, phase-change materials, that can reversibly and rapidly change from an amorphous phase to a crystalline phase when subject to heating or cooling have been identified for the development of the next generation electronic memories. There are limitations to the miniaturization of these devices due to current synthesis and theoretical considerations that place a lower limit of 2 nm on the minimum bit size, below which the material does not transform ...
This chapter is dedicated to the research activities performed on phase change nanowires (NWs) and t...
Extreme nanowires: structural and functional properties of filled single walled carbon nanotubes ...
We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge(2)Sb(2)Te(5) ...
The demand for high-density memory in tandem with limitations imposed by the minimum feature size of...
The demand for high-density memory in tandem with limitations imposed by the minimum feature size of...
Phase change memory is a promising candidate for the next-generation nonvolatile data storage. Unlik...
One of the most important subjects in nanosciences is to identify and exploit the relationship betwe...
The miniaturization of memory devices has been one of the major driving forces in the exploration of...
Phase change memory (PCM) can reversibly transform between the amorphous and crystalline phase withi...
The scalability of Ine one of the phase change materials, is investigated. By depositing the materia...
hase change memory (PCM) is one of the most promising candidates for uni-versal nonvolatile memory a...
The quest for universal memory is driving the rapid development of memories with superior all-round ...
Phase change memory has been developed into a mature technology capable of storing information in a ...
This thesis describes nanoscale devices utilizing phase change and two-dimensional materials. The fu...
Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage...
This chapter is dedicated to the research activities performed on phase change nanowires (NWs) and t...
Extreme nanowires: structural and functional properties of filled single walled carbon nanotubes ...
We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge(2)Sb(2)Te(5) ...
The demand for high-density memory in tandem with limitations imposed by the minimum feature size of...
The demand for high-density memory in tandem with limitations imposed by the minimum feature size of...
Phase change memory is a promising candidate for the next-generation nonvolatile data storage. Unlik...
One of the most important subjects in nanosciences is to identify and exploit the relationship betwe...
The miniaturization of memory devices has been one of the major driving forces in the exploration of...
Phase change memory (PCM) can reversibly transform between the amorphous and crystalline phase withi...
The scalability of Ine one of the phase change materials, is investigated. By depositing the materia...
hase change memory (PCM) is one of the most promising candidates for uni-versal nonvolatile memory a...
The quest for universal memory is driving the rapid development of memories with superior all-round ...
Phase change memory has been developed into a mature technology capable of storing information in a ...
This thesis describes nanoscale devices utilizing phase change and two-dimensional materials. The fu...
Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage...
This chapter is dedicated to the research activities performed on phase change nanowires (NWs) and t...
Extreme nanowires: structural and functional properties of filled single walled carbon nanotubes ...
We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge(2)Sb(2)Te(5) ...