Electron irradiation of anthracite functionalized by dodecyl groups leads to recrystallization of the carbon network into diamonds. The diamonds range in size from ∼2 to ∼10 nm and exhibit {111} spacing of 2.1 Å. A bulk process consistent with bias-enhanced nucleation is proposed in which the dodecyl group provides hydrogen during electron irradiation. Recrystallization into diamond occurs in the hydrogenated graphitic subsurface layers. Unfunctionalized anthracite could not be converted into diamond during electron irradiation. The dependence of the phase transition pressure on cluster size was estimated, and it was found that diamond particles with a radius up to 20 nm could be formed
Diamond is an attractive material due to its extreme hardness, high thermal conductivity, quantum op...
Nanocrystalline diamond (NCD) was observed after reactive ball milling of anthracite coal with cyclo...
[[abstract]]A modified nucleation and growth process was adopted so as to improve the electron field...
Deposition of 1000 eV pure carbon ions onto Si(001) held at 800 degrees C led to direct nucleation o...
The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynam...
Diamond nucleation and growth from submicron clusters consisting of an amorphous carbon phase with p...
Diamond particles and films were grown on graphite substrates using hot-filament CVD method with a p...
We describe experiments which demonstrate that carbon atoms introduced into a fused-silica substrate...
We report synthesis of diamond nanocrystals directly from carbon atoms embedded into fused silica by...
The objective of the present work is to investigate the effect of hydrogen implantation on graphite ...
Growth of diamond films from C{sub 60}/Ar microwave discharges results in a nanocrystalline microstr...
A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited...
Combined high-resolution transmission electron microscopy, selected area electron diffraction and pa...
The presented work is devoted to the study of the formation of the thinnest diamond film (diamane). ...
We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of...
Diamond is an attractive material due to its extreme hardness, high thermal conductivity, quantum op...
Nanocrystalline diamond (NCD) was observed after reactive ball milling of anthracite coal with cyclo...
[[abstract]]A modified nucleation and growth process was adopted so as to improve the electron field...
Deposition of 1000 eV pure carbon ions onto Si(001) held at 800 degrees C led to direct nucleation o...
The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynam...
Diamond nucleation and growth from submicron clusters consisting of an amorphous carbon phase with p...
Diamond particles and films were grown on graphite substrates using hot-filament CVD method with a p...
We describe experiments which demonstrate that carbon atoms introduced into a fused-silica substrate...
We report synthesis of diamond nanocrystals directly from carbon atoms embedded into fused silica by...
The objective of the present work is to investigate the effect of hydrogen implantation on graphite ...
Growth of diamond films from C{sub 60}/Ar microwave discharges results in a nanocrystalline microstr...
A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited...
Combined high-resolution transmission electron microscopy, selected area electron diffraction and pa...
The presented work is devoted to the study of the formation of the thinnest diamond film (diamane). ...
We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of...
Diamond is an attractive material due to its extreme hardness, high thermal conductivity, quantum op...
Nanocrystalline diamond (NCD) was observed after reactive ball milling of anthracite coal with cyclo...
[[abstract]]A modified nucleation and growth process was adopted so as to improve the electron field...