The electron transmission coefficient calculated for Cd1-xZnxS quantum dots-Application in the non volatile memories

<p>In this paper, we study the tunneling effect in the case of a double Cd_1-xZn_xS quantum dot embedded in an insulating material. The quantum dots are assumed to have a flattened cylindrical geometry with a finite barrier at the boundary. The electron transmission coefficient has been computed as a function of the inter-quantum dot separation for different zinc compositions. As is found, the CdS system is the most appropriate to favor the tunneling effect for the electrons in a large range of inter-quantum dot separations. This study can open a way for designing a new class of nanocrystal devices based on Cd_1-xZn_xS QDs, particularly the non volatile memories.