<i>In situ</i> atomic-scale transmission electron microscopy (TEM) can provide critical information regarding growth dynamics and kinetics of nanowires. A catalyst-aided nanowire growth mechanism has been well-demonstrated by this method. By contrast, the growth mechanism of nanowires without catalyst remains elusive because of a lack of crucial information on related growth dynamics at the atomic level. Herein, we present a real-time atomic-scale observation of the growth of tungsten oxide nanowires through an environmental TEM. Our results unambiguously demonstrate that the vapor–solid mechanism dominates the nanowire growth, and the oscillatory mass transport on the nanowire tip maintains the noncatalytic growth. Autocorrelation analysis...
We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmenta...
Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the appli...
We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposi...
<i>In situ</i> atomic-scale transmission electron microscopy (TEM) can provide critical information ...
In situ observations during vapor–liquid–solid (VLS) growth of semiconductor nanowires in the chambe...
ConspectusFunctional materials and devices require nanoscale control of morphology, crystal structur...
The majority of the nanowire synthesis methods utilize catalyst particles to guide the nanowire geom...
Fundamental concepts of the crystal formation suggest that the growth and decomposition are determin...
In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By growin...
The well-known vapor–liquid–solid (VLS) mechanism results in high-purity, single-crystalline wires w...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Catalyst-free methods are important for the fabrication of pure nanowires (NWs). However, the growth...
We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmenta...
Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the appli...
We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposi...
<i>In situ</i> atomic-scale transmission electron microscopy (TEM) can provide critical information ...
In situ observations during vapor–liquid–solid (VLS) growth of semiconductor nanowires in the chambe...
ConspectusFunctional materials and devices require nanoscale control of morphology, crystal structur...
The majority of the nanowire synthesis methods utilize catalyst particles to guide the nanowire geom...
Fundamental concepts of the crystal formation suggest that the growth and decomposition are determin...
In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By growin...
The well-known vapor–liquid–solid (VLS) mechanism results in high-purity, single-crystalline wires w...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
Catalyst-free methods are important for the fabrication of pure nanowires (NWs). However, the growth...
We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmenta...
Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the appli...
We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposi...