Catalyst Incorporation at Defects during Nanowire Growth

Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in ⟨110⟩ oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in ⟨112⟩ oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst–nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires