Atomic Force Microscopy Based Tunable Local Anodic Oxidation of Graphene

We have fabricated graphene/graphene oxide/graphene (G/GO/G) junctions by local anodic oxidation lithography using atomic force microscopy (AFM). The conductance of the G/GO/G junction decreased with the bias voltage applied to the AFM cantilever <i>V</i>_tip. For G/GO/G junctions fabricated with large and small |<i>V</i>_tip|. GO was semi-insulating and semiconducting, respectively. AFM-based LAO lithography can be used to locally oxidize graphene with various oxidation levels and achieve tunability from semiconducting to semi-insulating GO