Simulation studies of a β-SiC on insulator Pockels phase modulator

We have designed waveguide modulators using β-SiC-on-insulator waveguides and the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure. This allowed us to evaluate the local modulation of the refractive index as a function of applied external bias and to determine the effective index modulation of the guided mode. The optical simulations were performed using the Spectral Index and the Effective Index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Application to Mach-Zehnder intensity modulators is described. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology