Surface characterization of 6H-SiC (0001) substrates in indentation and abrasive machining was carried out to investigate microfracture, residual damage, and surface roughness associated with material removal and surface generation. Brittle versus plastic deformation was studied using Vickers indention and nano-indentation. To characterize the abrasive machining response, the 6H-SiC (0001) substrates were ground using diamond wheels with grit sizes of 25, 15 and 7 mum, and then polished with diamond suspensions of 3 and 0.05 mum. It is found that in indentation, there was a scale effect for brittle versus plastic deformation in 6H-SiC substrates. Also, in grinding, the scales of fracture and surface roughness of the substrates decreased wit...
Grinding of Silicon Carbide (SiC) has been found difficult to be machined since the material is typi...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
Surface and subsurface damages appear inevitably in the grinding process, which will influence the p...
Silicon carbide (SiC) single crystals have been used as the substrates of a new generation of wide b...
The objective of this study was to develop high-quality grinding protocols for polycrystalline silic...
Silicon carbide (SiC) is well known for its excellent material properties, high durability, high wea...
The super-precise theory for machining single crystal SiC substrates with abrasives needs to be impr...
Single crystal silicon carbide is widely used for microelectronics, optoelectronics and medicine sec...
Single crystal silicon carbide (SiC) is an ultra hard ceramic material which possesses extremely hig...
AbstractIn this study, ultra-precision machining using a polycrystalline diamond (PCD) micro end mil...
There has been a recent surge of interest in the research, development and testing of Silicon Carbid...
PolyU Library Call No.: [THS] LG51 .H577P ISE 2016 Zhangxxiii, 210 pages :color illustrationsTo ensu...
This paper addresses the effects of bonds and grains of abrasive tools on the edge aspect of ground ...
This research project was undertaken to study and assess the surface finish and integrity of the sil...
The subsurface plastic deformation below alumina (Al 2O ...
Grinding of Silicon Carbide (SiC) has been found difficult to be machined since the material is typi...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
Surface and subsurface damages appear inevitably in the grinding process, which will influence the p...
Silicon carbide (SiC) single crystals have been used as the substrates of a new generation of wide b...
The objective of this study was to develop high-quality grinding protocols for polycrystalline silic...
Silicon carbide (SiC) is well known for its excellent material properties, high durability, high wea...
The super-precise theory for machining single crystal SiC substrates with abrasives needs to be impr...
Single crystal silicon carbide is widely used for microelectronics, optoelectronics and medicine sec...
Single crystal silicon carbide (SiC) is an ultra hard ceramic material which possesses extremely hig...
AbstractIn this study, ultra-precision machining using a polycrystalline diamond (PCD) micro end mil...
There has been a recent surge of interest in the research, development and testing of Silicon Carbid...
PolyU Library Call No.: [THS] LG51 .H577P ISE 2016 Zhangxxiii, 210 pages :color illustrationsTo ensu...
This paper addresses the effects of bonds and grains of abrasive tools on the edge aspect of ground ...
This research project was undertaken to study and assess the surface finish and integrity of the sil...
The subsurface plastic deformation below alumina (Al 2O ...
Grinding of Silicon Carbide (SiC) has been found difficult to be machined since the material is typi...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
Surface and subsurface damages appear inevitably in the grinding process, which will influence the p...