The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base current ideality of polysilicon emitter bipolar transistors. This behaviour is explained by the passivation of interface states at the oxide/silicon interface around the perimeter of the emitter
Polysilicon emitters are prevalent in today's advanced B iCMOS processes. Electrical and materi...
An analytical model is proposed by including carrier transport mechanisms which previous unified ana...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is s...
This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is s...
This thesis investigates the role of fluorine in both npn and pnp polysilicon emitter bipolar transi...
This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is s...
Silicon bipolar transistors have been fabricated with arsenic implanted or phosphorous diffused poly...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
A strong correlation has been found between the electrical, compositional and structural properties ...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
Polysilicon emitter vertical NPN transistors were fabricated in an attempt to create devices with ve...
The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emi...
High quality passivating contacts can be realized by using the combination of a thin interfacial oxi...
Polysilicon emitters are prevalent in today's advanced B iCMOS processes. Electrical and materi...
An analytical model is proposed by including carrier transport mechanisms which previous unified ana...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is s...
This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is s...
This thesis investigates the role of fluorine in both npn and pnp polysilicon emitter bipolar transi...
This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is s...
Silicon bipolar transistors have been fabricated with arsenic implanted or phosphorous diffused poly...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
A strong correlation has been found between the electrical, compositional and structural properties ...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
Polysilicon emitter vertical NPN transistors were fabricated in an attempt to create devices with ve...
The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emi...
High quality passivating contacts can be realized by using the combination of a thin interfacial oxi...
Polysilicon emitters are prevalent in today's advanced B iCMOS processes. Electrical and materi...
An analytical model is proposed by including carrier transport mechanisms which previous unified ana...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
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