Size-dependent asymmetric low-frequency Raman line shapes have been observed from silicon (Si) nanostructures (NSs) due to a quantum confinement effect. The acoustic phonons in Si NSs interact with an intraband quasi-continuum to give rise to Fano interaction in the low-frequency range. The experimental asymmetric Raman line shape has been explained by developing a theoretical model that incorporates the quantum-confined phonons interacting with an intraband quasi-continuum available in Si NSs as a result of discretization of energy levels with unequal separation. We discover that a phenomenon similar to Brillouin scattering is possible at the nanoscale in the low-frequency regime and thus may be called “Fano scattering” in general. A metho...
In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum tr...
We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silico...
We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultrathi...
AbstractPhoto-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructu...
Strong computational capabilities are required for precise prediction of Raman spectra from low-dime...
In recent years, the manipulation of Fano resonances in the time domain has unlocked deep insights i...
The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin L...
Fano resonance which describes a quantum interference between continuum and discrete states, provide...
The effect of confinement on the acoustic phonon dispersion relation and heat capacity in free-stand...
Based on a modification of the elastic continuum model, a mathematical model describing the processe...
We use molecular-dynamics simulation of phonon wave-packets to study interfacial phonon scattering. ...
An anomalous nature of Raman spectral asymmetry has been reported here from silicon nanowires (SiNWs...
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by extern...
The dispersion curves of confined acoustic phonons in ~10 and ~30 nm Si membranes were measured usin...
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by extern...
In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum tr...
We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silico...
We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultrathi...
AbstractPhoto-excitation and size-dependent Raman scattering studies on the silicon (Si) nanostructu...
Strong computational capabilities are required for precise prediction of Raman spectra from low-dime...
In recent years, the manipulation of Fano resonances in the time domain has unlocked deep insights i...
The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin L...
Fano resonance which describes a quantum interference between continuum and discrete states, provide...
The effect of confinement on the acoustic phonon dispersion relation and heat capacity in free-stand...
Based on a modification of the elastic continuum model, a mathematical model describing the processe...
We use molecular-dynamics simulation of phonon wave-packets to study interfacial phonon scattering. ...
An anomalous nature of Raman spectral asymmetry has been reported here from silicon nanowires (SiNWs...
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by extern...
The dispersion curves of confined acoustic phonons in ~10 and ~30 nm Si membranes were measured usin...
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by extern...
In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum tr...
We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silico...
We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultrathi...