The surprising ferroelectricity displayed by hafnia thin films has been attributed to a metastable polar orthorhombic (<i>Pca</i>2<sub>1</sub>) phase. Nevertheless, the conditions under which this (or another competing) ferroelectric phase may be stabilized remain unresolved. It has been hypothesized that a variety of factors, including strain, grain size, electric field, impurities and dopants, may contribute to the observed ferroelectricity. Here, we use first-principles computations to examine the influence of mechanical and electrical boundary conditions (i.e., strain and electric field) on the relative stability of a variety of relevant nonpolar and polar phases of hafnia. We find that although strain or electric field, independently, ...
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at t...
The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for di...
We study the interplay of structural and polar distortions in hexagonalYMnO3 and short-period PbTiO3...
Dogan et al.[1], investigated the causes of ferroelectricity in doped hafnia using ab initio methods...
The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense rese...
Hafnia ferroelectrics combine technological promise and unprecedented behaviors. Their peculiarity s...
Nonvolatile memories are in increasing demand as the world moves toward information digitization. Th...
Hf₁₋ₓZrₓO₂ (x ∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a fluorite c...
Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar pha...
The wake-up in doped hafnia ferroelectric devices is an extremely important process to understand in...
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas ...
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only...
In the last decade orthorhombic hafnia and zirconia films have attracted tremendous attention arisin...
Ferroelectric materials are characterized by a spontaneous polar distortion. The behavior of such di...
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at t...
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at t...
The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for di...
We study the interplay of structural and polar distortions in hexagonalYMnO3 and short-period PbTiO3...
Dogan et al.[1], investigated the causes of ferroelectricity in doped hafnia using ab initio methods...
The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense rese...
Hafnia ferroelectrics combine technological promise and unprecedented behaviors. Their peculiarity s...
Nonvolatile memories are in increasing demand as the world moves toward information digitization. Th...
Hf₁₋ₓZrₓO₂ (x ∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a fluorite c...
Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar pha...
The wake-up in doped hafnia ferroelectric devices is an extremely important process to understand in...
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas ...
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only...
In the last decade orthorhombic hafnia and zirconia films have attracted tremendous attention arisin...
Ferroelectric materials are characterized by a spontaneous polar distortion. The behavior of such di...
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at t...
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at t...
The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for di...
We study the interplay of structural and polar distortions in hexagonalYMnO3 and short-period PbTiO3...