The spin galvanic effect (SGE) describes the conversion of a nonequilibrium spin polarization into a transverse charge current. Recent experiments have demonstrated a large conversion efficiency for the two-dimensional electron gas formed at the interface between two insulating oxides, LaAlO3 and SrTiO3. Here, we analyze the SGE for oxide interfaces within a three-band model for the Ti t2g orbitals which displays an interesting variety of effective spin-orbit couplings in the individual bands that contribute differently to the spin-charge conversion. Our analytical approach is supplemented by a numerical treatment where we also investigate the influence of disorder and temperature, which turns out to be crucial to providing an appropriate d...
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the ...
Advances in growth technology of oxide materials allow single atomic layer control of heterostructur...
The conductive interface at LaAlO3/SrTiO3 (LAO/STO) can be designed to exhibit high mobility with tu...
The spin galvanic effect (SGE) describes the conversion of a nonequilibrium spin polarization into a...
We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-b...
The anomalous transport properties of transition metal oxides, in particular the surface of SrTiO₃ o...
International audienceAbstract Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs...
A two-dimensional (2D) electron gas emerged at a LaAlO3/SrTiO3 (LAO/STO) interface is an interesting...
Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at com...
Two-dimensional electron gases (2DEGs) at oxide interfaces have been a topic of intensive research d...
The conductive interface at LaAlO3/SrTiO3 (LAO/STO) can be designed to exhibit high mobility with tu...
Both theoretically and experimentally, enormous progress has been made toward under-standing and con...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
The concept of spintronics (short for spin transport electronics) was first developed in the 1980s a...
While spintronics has traditionally relied on ferromagnetic metals as spin generators and detectors,...
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the ...
Advances in growth technology of oxide materials allow single atomic layer control of heterostructur...
The conductive interface at LaAlO3/SrTiO3 (LAO/STO) can be designed to exhibit high mobility with tu...
The spin galvanic effect (SGE) describes the conversion of a nonequilibrium spin polarization into a...
We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-b...
The anomalous transport properties of transition metal oxides, in particular the surface of SrTiO₃ o...
International audienceAbstract Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs...
A two-dimensional (2D) electron gas emerged at a LaAlO3/SrTiO3 (LAO/STO) interface is an interesting...
Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at com...
Two-dimensional electron gases (2DEGs) at oxide interfaces have been a topic of intensive research d...
The conductive interface at LaAlO3/SrTiO3 (LAO/STO) can be designed to exhibit high mobility with tu...
Both theoretically and experimentally, enormous progress has been made toward under-standing and con...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
The concept of spintronics (short for spin transport electronics) was first developed in the 1980s a...
While spintronics has traditionally relied on ferromagnetic metals as spin generators and detectors,...
Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the ...
Advances in growth technology of oxide materials allow single atomic layer control of heterostructur...
The conductive interface at LaAlO3/SrTiO3 (LAO/STO) can be designed to exhibit high mobility with tu...