Basic Mechanisms of Al Interaction with the ZnO Surface

Deposition of Al on ZnO is used for a number of electronic and catalytic devices as well as for nanoenergetic materials. The interface structure and chemical composition often control the performance of devices. In this study, in situ infrared spectroscopy, X-ray photoemission spectroscopy, and low energy ion scattering are combined to investigate the initial stage of interface formation between Al and ZnO. We find that (a) the interface is highly inhomogeneous with discontinuous Al patches, leaving ∼10% of the ZnO surface uncovered even after deposition of an equivalent of 11 nm-thick Al film; (b) upon Al deposition, Al reduces ZnO by forming Al₂O₃ and releasing Zn to the surface, and this process continues as more Al is deposited; (c) the reduced surface Zn atoms readily desorb at 150 °C; and (d) at higher temperature (>600 °C) all Al is oxidized as a result of mass transport. Deposition of a thin Al₂O₃ layer on ZnO prior to Al deposition effectively prevents Al penetration and Zn release, requiring higher temperatures to oxidize Al