Chemical transformations on the surface of commercially available 3C-SiC nanoparticles were studied by means of FTIR, XPS, and temperature-programmed desorption mass spectrometry methods. Thermal oxidation of SiC NPs resulted in the formation of a hydroxylated SiO<sub>2</sub> surface layer with C<sub>3</sub>Si–H and CH<sub><i>x</i></sub> groups over the SiO<sub>2</sub>/SiC interface. Controllable oxidation followed by oxide dissolution in HF or KOH solution allowed the SiC NPs size tuning from 17 to 9 nm. Oxide-free SiC surfaces, terminated by hydroxyls and C<sub>3</sub>Si–H groups, can be efficiently functionalized by alkenes under thermal or photochemical initiation. Treatment of SiC NPs by HF/HNO<sub>3</sub> mixture produces a carbon-enr...
Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion ...
Mesoporous carbon-silica (C-SiO2) precursors were synthesized by a sol-gel route with different dryi...
National audienceIn a recent past, silicon carbide (SiC), silicon nitride (Si3N4) and silicon carbon...
International audienceChemical transformations on the surface of commercially available 3C-SiC nanop...
In order to improve interfacial bonding strength between carbon nanofibers (CNFs) and SiC matrix in ...
Silicon carbide on insulator is a promising platform for electronic devices at high temperature as w...
Silicon carbide nanowires are valuable for electronic and optical applications, due to their high me...
The integration of semiconductors with organic and biological systems is an emerging research area t...
This work presents the first alkyl monolayers covalently bound on HF-treated silicon carbide surface...
Chemical nature of products, formed during electrochemical dissolution of polycrystalline 3C-SiC sub...
[[abstract]]The initial oxidation of the Si-terminated 6H-SiC(0001)3x3 reconstructed surface is stud...
The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthes...
Nano-sized 3C-SiC was synthesized using sol–gel method. The silica bearing sol was prepared using fu...
Silicon carbide and silicon rich carbide (SiC and SRC) thin films were prepared by PECVD and anneale...
Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addi...
Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion ...
Mesoporous carbon-silica (C-SiO2) precursors were synthesized by a sol-gel route with different dryi...
National audienceIn a recent past, silicon carbide (SiC), silicon nitride (Si3N4) and silicon carbon...
International audienceChemical transformations on the surface of commercially available 3C-SiC nanop...
In order to improve interfacial bonding strength between carbon nanofibers (CNFs) and SiC matrix in ...
Silicon carbide on insulator is a promising platform for electronic devices at high temperature as w...
Silicon carbide nanowires are valuable for electronic and optical applications, due to their high me...
The integration of semiconductors with organic and biological systems is an emerging research area t...
This work presents the first alkyl monolayers covalently bound on HF-treated silicon carbide surface...
Chemical nature of products, formed during electrochemical dissolution of polycrystalline 3C-SiC sub...
[[abstract]]The initial oxidation of the Si-terminated 6H-SiC(0001)3x3 reconstructed surface is stud...
The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthes...
Nano-sized 3C-SiC was synthesized using sol–gel method. The silica bearing sol was prepared using fu...
Silicon carbide and silicon rich carbide (SiC and SRC) thin films were prepared by PECVD and anneale...
Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addi...
Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion ...
Mesoporous carbon-silica (C-SiO2) precursors were synthesized by a sol-gel route with different dryi...
National audienceIn a recent past, silicon carbide (SiC), silicon nitride (Si3N4) and silicon carbon...