Here we show a new nanowire growth procedure, exploring the thermally activated motion of Au droplets on III–V surfaces. We show that by setting a single growth parameter we can activate the crawling motion of Au droplets in vacuum and locally modify surface composition in order to enhance vapor–solid (VS) growth along oxide-free areas on the trail of the metal particle. Asymmetric VS growth rates are comparable in magnitude to the vapor–liquid–solid growth, producing unconventional wurtzite GaP morphologies, which shows negligible defect density as well as optical signal in the green spectral region. Finally, we demonstrate that this effect can also be explored in different substrate compositions and orientations with the final shape finel...
By combining in situ and ex situ transmission electron microscopy measurements, we examine the facto...
Nanometer-sized liquid droplets formed at temperatures below the bulk melting point become supercool...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...
We study the role of gold droplets in the initial stage of nanowire growth via the vapor–liquid–soli...
Anisotropy in crystal growth of III-V semiconductor nanowires can be enhanced by the assistance of a...
We present results that provide fundamental insights on how to experimentally tailor the planar defe...
we present results that provide fundamental insights on how to experimentally tailor the planar defe...
International audienceWe study experimentally and theoretically the consumption of the apical galliu...
Growth of III–V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negli...
We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III ...
Achieving quantum confinement by bottom-up growth of nanowires has so far been limited to the abilit...
The crystal structure of GaP nanowires grown by Au-assisted chemical beam epitaxy was investigated a...
By combining in situ and ex situ transmission electron microscopy measurements, we examine the facto...
Nanometer-sized liquid droplets formed at temperatures below the bulk melting point become supercool...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...
We study experimentally and theoretically the consumption of the apical gallium droplet that mediate...
We study the role of gold droplets in the initial stage of nanowire growth via the vapor–liquid–soli...
Anisotropy in crystal growth of III-V semiconductor nanowires can be enhanced by the assistance of a...
We present results that provide fundamental insights on how to experimentally tailor the planar defe...
we present results that provide fundamental insights on how to experimentally tailor the planar defe...
International audienceWe study experimentally and theoretically the consumption of the apical galliu...
Growth of III–V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire growth...
The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negli...
We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III ...
Achieving quantum confinement by bottom-up growth of nanowires has so far been limited to the abilit...
The crystal structure of GaP nanowires grown by Au-assisted chemical beam epitaxy was investigated a...
By combining in situ and ex situ transmission electron microscopy measurements, we examine the facto...
Nanometer-sized liquid droplets formed at temperatures below the bulk melting point become supercool...
We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au-G...