A new non-centrosymmetric (NCS) polar sulfide PbGa<sub>2</sub>GeS<sub>6</sub> has been synthesized by a self-fluxing method at a relatively low temperature of 550 °C with desirable properties for nonlinear optical (NLO) applications. Its structure is built by three types of infinite chains intersecting in three dimensions, where the NCS building units are tetragonal pyramids of PbS<sub>4</sub> and tetrahedra of MS<sub>4</sub> (M = Ga, Ga/Ge). Powder of PbGa<sub>2</sub>GeS<sub>6</sub> exhibits phase-matchable (PM) second-order NLO activity with strong second harmonic generation (SHG) intensity of 0.5× AgGaS<sub>2</sub> at the particle size of 150–210 μm, high laser-induced damage threshold (LIDT) of 5× AgGaS<sub>2</sub>, and a wide transmiss...
An unusual zero-dimensional quaternary sulfide, Ba<sub>23</sub>Ga<sub>8</sub>Sb<sub>2</sub>S<sub>38<...
Two new mid-infrared (MIR) nonlinear optical (NLO) chalcogenide crystals, Ba10Zn7In6S26 (1) and Ba10...
The thesis describes the characterisation of ternary II-IV-V2 and I-III-VI2 semiconductors with a vi...
A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure wa...
Two new infrared (IR) nonlinear optical (NLO) sulfides, Na<sub>2</sub>Ga<sub>2</sub>GeS<sub>6</sub> ...
To simultaneously maintain large second harmonic generation (SHG) and high laser damage thresholds (...
Trigonal-planar units with high physicochemical stability and large polarizability anisotropy are on...
Two new metal sulfides, Ba<sub>2</sub>Ga<sub>8</sub>MS<sub>16</sub> (M = Si, Ge), have been synthesi...
Owing to wide infrared (IR) transparency ranges, high laser damage thresholds, and being easy to gro...
Large second-harmonic generation (SHG) response and broad band gap are two important and competitive...
An infrared (IR) nonlinear optical (NLO) material, Ag3Ga3SiSe8, has been synthesized for the first t...
Two new ternary noncentrosymmetric (NCS) isostructural compounds, SnGa<sub>4</sub>S<sub>7</sub> (<b>...
High-performance infrared (IR) nonlinear optical (NLO) materials with large laser damage thresholds ...
A series of new metal chalcogenides Ba<sub>4</sub>CuGa<sub>5</sub>Q<sub>12</sub> (Q = S, S<sub>0.75<...
A series of new infrared nonlinear optical (IR NLO) materials, LiRe3MS7 (Re = Sm, Gd; M = Si, Ge), h...
An unusual zero-dimensional quaternary sulfide, Ba<sub>23</sub>Ga<sub>8</sub>Sb<sub>2</sub>S<sub>38<...
Two new mid-infrared (MIR) nonlinear optical (NLO) chalcogenide crystals, Ba10Zn7In6S26 (1) and Ba10...
The thesis describes the characterisation of ternary II-IV-V2 and I-III-VI2 semiconductors with a vi...
A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure wa...
Two new infrared (IR) nonlinear optical (NLO) sulfides, Na<sub>2</sub>Ga<sub>2</sub>GeS<sub>6</sub> ...
To simultaneously maintain large second harmonic generation (SHG) and high laser damage thresholds (...
Trigonal-planar units with high physicochemical stability and large polarizability anisotropy are on...
Two new metal sulfides, Ba<sub>2</sub>Ga<sub>8</sub>MS<sub>16</sub> (M = Si, Ge), have been synthesi...
Owing to wide infrared (IR) transparency ranges, high laser damage thresholds, and being easy to gro...
Large second-harmonic generation (SHG) response and broad band gap are two important and competitive...
An infrared (IR) nonlinear optical (NLO) material, Ag3Ga3SiSe8, has been synthesized for the first t...
Two new ternary noncentrosymmetric (NCS) isostructural compounds, SnGa<sub>4</sub>S<sub>7</sub> (<b>...
High-performance infrared (IR) nonlinear optical (NLO) materials with large laser damage thresholds ...
A series of new metal chalcogenides Ba<sub>4</sub>CuGa<sub>5</sub>Q<sub>12</sub> (Q = S, S<sub>0.75<...
A series of new infrared nonlinear optical (IR NLO) materials, LiRe3MS7 (Re = Sm, Gd; M = Si, Ge), h...
An unusual zero-dimensional quaternary sulfide, Ba<sub>23</sub>Ga<sub>8</sub>Sb<sub>2</sub>S<sub>38<...
Two new mid-infrared (MIR) nonlinear optical (NLO) chalcogenide crystals, Ba10Zn7In6S26 (1) and Ba10...
The thesis describes the characterisation of ternary II-IV-V2 and I-III-VI2 semiconductors with a vi...