Ultrafine beta-SiC powders were synthesized by introducing trichloromethylsilane and hydrogen into the high temperature RF thermal plasma argon gas. Powders were characterized by XRD, TEM, TGA, FT-IR and wet chemical analysis. Two different positions of reactant gas injection, i.e., upstream and downstream of the plasma flame, were compared in terms of the powder characteristics. The optimum concentration of hydrogen was found out to be about 3 to 4 mol% for the upstream injection. Amorphous SiC with free carbon was formed when the hydrogen concentration was lower than optimum and beta-SiC with free silicon was formed when it was higher than the optimum. For the downstream injection, free silicon formation was not significant and free carbo...
Chemical vapor deposition of Sic from methyltrichlorosilane and hydrogen was studied as a function o...
International audienceThe aim of the present work is to synthesize high strength monolithic SiC tube...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest owing to useful m...
Ultrafine SiC powders have been prepared by gas phase synthesis from silane and methane in an argon ...
This study explores a new route for the synthesis of SiC Ultra Fine Powder (UFP) directly from solid...
International audienceThe chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosila...
Alumina particles were successfully coated with silicon carbide (SiC) layers in a microwave plasma-a...
The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on th...
Thermal plasma processes for ultrafine ceramic powders synthesis are discussed and explained by exam...
Silicon carbide (SiC) is a superior material for electronic and optoelectronic devices functioning u...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
International audienceIn the growing field of nanomaterials, SiC nanoparticles arouse interest for n...
This study investigates chemical vapor deposition of C from CH4 on particulate SiO2 and subsequent c...
Chemical vapor deposition of Sic from methyltrichlorosilane and hydrogen was studied as a function o...
International audienceThe aim of the present work is to synthesize high strength monolithic SiC tube...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful...
Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest owing to useful m...
Ultrafine SiC powders have been prepared by gas phase synthesis from silane and methane in an argon ...
This study explores a new route for the synthesis of SiC Ultra Fine Powder (UFP) directly from solid...
International audienceThe chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosila...
Alumina particles were successfully coated with silicon carbide (SiC) layers in a microwave plasma-a...
The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on th...
Thermal plasma processes for ultrafine ceramic powders synthesis are discussed and explained by exam...
Silicon carbide (SiC) is a superior material for electronic and optoelectronic devices functioning u...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...
International audienceIn the growing field of nanomaterials, SiC nanoparticles arouse interest for n...
This study investigates chemical vapor deposition of C from CH4 on particulate SiO2 and subsequent c...
Chemical vapor deposition of Sic from methyltrichlorosilane and hydrogen was studied as a function o...
International audienceThe aim of the present work is to synthesize high strength monolithic SiC tube...
Chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two differen...