Aluminium nitride powders were synthesized by the gas-phase reaction of AlCl3-NH3-N2 system. The yield of AlN powders from AlCl3 and their crystallinity increased as the reaction temperature and the mole ratio of NH3/AlCl3 were increased. AlN powders were also formed outside the reactor and their crystallinity was amorphous. The yield of AlN powders was as high as 80% when the reactor temperature was 1000 °C and the mole ratio of NH3/AlCl3 was 8. Most of the HCl by-product was recovered as NH4Cl outside the reactor. Powder characteristics, such as shape, size distribution and crystallinity, were also studied.X1123sciescopu
AIN powders were prepared by in-situ synthesis technique. It is a reaction of binary molten Al-Mg al...
Synthesis, processing and characterization of nanocrystalline aluminum nitride has been systematical...
Aluminum nitride is widely-used material for semiconductor devices and ceramics production. Despite ...
Fine AlN powder was synthesized by vapor phase reaction of AlCl_3 and NH_3 at 720°-1190℃. Most of th...
Fine AlN powder was synthesized by vapor phase reaction of AlCl_3 and NH_3 at 720°-1190°C. Most of t...
Due to its combined properties of high electrical resistivity and high thermal conductivity aluminum...
A pure AlN powder was synthesized continuously at 1150-1500℃ by the floating nitridation technique. ...
309-312Nanonsized AlN powders were prepared by nitridation of coarse aluminium powder in flowing N₂ ...
Synthesis of AlN powder via an organic precursor prepared from anhydrous aluminum chloride and ethyl...
Aluminum nitride (AlN) powders were prepared from the oxide precursors aluminum nitrate, aluminum h...
In this study, AlN whiskers were prepared in a tube furnace at 1000˚C for 1h with 500 nitrogen gas...
Using aluminum hydroxide (Al(OH)₃) and aluminum nitrate (Al(NO₃)₃.9H₂O) as aluminum sources and high...
The nitriding reaction of floating Al particles in N_2 gas was studied at 1350°-1550℃. The hollow sp...
Fine AlN powder was synthesized continuously at 1350°-1550℃ by the floating nitridation technique. T...
This work introduces a new concept for the synthesis of ultrafine aluminum nitride powder. A transfe...
AIN powders were prepared by in-situ synthesis technique. It is a reaction of binary molten Al-Mg al...
Synthesis, processing and characterization of nanocrystalline aluminum nitride has been systematical...
Aluminum nitride is widely-used material for semiconductor devices and ceramics production. Despite ...
Fine AlN powder was synthesized by vapor phase reaction of AlCl_3 and NH_3 at 720°-1190℃. Most of th...
Fine AlN powder was synthesized by vapor phase reaction of AlCl_3 and NH_3 at 720°-1190°C. Most of t...
Due to its combined properties of high electrical resistivity and high thermal conductivity aluminum...
A pure AlN powder was synthesized continuously at 1150-1500℃ by the floating nitridation technique. ...
309-312Nanonsized AlN powders were prepared by nitridation of coarse aluminium powder in flowing N₂ ...
Synthesis of AlN powder via an organic precursor prepared from anhydrous aluminum chloride and ethyl...
Aluminum nitride (AlN) powders were prepared from the oxide precursors aluminum nitrate, aluminum h...
In this study, AlN whiskers were prepared in a tube furnace at 1000˚C for 1h with 500 nitrogen gas...
Using aluminum hydroxide (Al(OH)₃) and aluminum nitrate (Al(NO₃)₃.9H₂O) as aluminum sources and high...
The nitriding reaction of floating Al particles in N_2 gas was studied at 1350°-1550℃. The hollow sp...
Fine AlN powder was synthesized continuously at 1350°-1550℃ by the floating nitridation technique. T...
This work introduces a new concept for the synthesis of ultrafine aluminum nitride powder. A transfe...
AIN powders were prepared by in-situ synthesis technique. It is a reaction of binary molten Al-Mg al...
Synthesis, processing and characterization of nanocrystalline aluminum nitride has been systematical...
Aluminum nitride is widely-used material for semiconductor devices and ceramics production. Despite ...