This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO2.X116553sciescopu
Memristive devices have been a hot topic in nanoelectronics for the last two decades in both academi...
International audienceThis chapter presents an overview of the charge trap, silicon nanocrystals and...
There has been a strong demand for developing an ultradense and low-power nonvolatile memory technol...
In the big data era, data storage is one of the cores in the whole information chain, which includes...
Nonvolatile memory devices are one of the most important components in modern electronic devices. Ma...
In the field of floating gate memory, also known as flash memory, silicon (Si) nanocrystals (NC) are...
The successful development of phase change memory technology (PCM) has been one of the most relevant...
textThe semiconductor market, despite some dips, has been generally increasing for a long time, and...
Recently, consumer electronics have moved toward data‐centric applications due to the development of...
Below the 65nm technology node, the present Flash memory technology is facing daunting scaling chall...
This thesis explores different nanoscale devices based on electron transport through carbon nanotube...
Nanoelectronics, as a true successor of microelectronics, is certainly a major technology boomer in ...
dvances in carbon nanotube field effect transistor (CNTFET) memory have been achieved in the past de...
In this review the different concepts of nanoscale resistive switching memory devices are described ...
In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM...
Memristive devices have been a hot topic in nanoelectronics for the last two decades in both academi...
International audienceThis chapter presents an overview of the charge trap, silicon nanocrystals and...
There has been a strong demand for developing an ultradense and low-power nonvolatile memory technol...
In the big data era, data storage is one of the cores in the whole information chain, which includes...
Nonvolatile memory devices are one of the most important components in modern electronic devices. Ma...
In the field of floating gate memory, also known as flash memory, silicon (Si) nanocrystals (NC) are...
The successful development of phase change memory technology (PCM) has been one of the most relevant...
textThe semiconductor market, despite some dips, has been generally increasing for a long time, and...
Recently, consumer electronics have moved toward data‐centric applications due to the development of...
Below the 65nm technology node, the present Flash memory technology is facing daunting scaling chall...
This thesis explores different nanoscale devices based on electron transport through carbon nanotube...
Nanoelectronics, as a true successor of microelectronics, is certainly a major technology boomer in ...
dvances in carbon nanotube field effect transistor (CNTFET) memory have been achieved in the past de...
In this review the different concepts of nanoscale resistive switching memory devices are described ...
In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM...
Memristive devices have been a hot topic in nanoelectronics for the last two decades in both academi...
International audienceThis chapter presents an overview of the charge trap, silicon nanocrystals and...
There has been a strong demand for developing an ultradense and low-power nonvolatile memory technol...