Add to ORKGA GaAs power MESFET with a GaAs/AlGaAs superlattice buffer layer has been developed for high efficiency and low distortion. The power MESFET has a low-high doped channel structure and it is fabricated using the standard process of GaAs power MESFET. The effects of the buffer structures on efficiency and linearity of the power MESFET's are investigated by analyzing the transconductance and drain conductance dependent on gate bias, drain bias, and frequency through the I-V and S-parameter measurements. The power MESFET with the optimized superlattice buffer shows output power of 1 dB higher than that with an undoped buffer layer. It shows efficiency increment of 3% and third-order intermodulation (IM3) reduction of 3 dB compared to the M...
Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer laye...
Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer laye...
The purpose of this thesis is to investigate the operation of GaAs field-effect transistors with par...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
This thesis describes the research activities that have been investigated for improving the 3rd orde...
The integration of power and low noise amplifiers on a single chip offers the opportunity to achieve...
Abstract—Excellent microwave performance and potential for low 1/f noise characteristics, GaAs high...
Three designs, a single‐stage, a parallel‐stage, and a two‐stage amplifier, for medium power monolit...
This paper presents a chip set operating at 3 V supply voltage for cellular communications at L-band...
This paper presents a chip set operating at 3 V supply voltage for cellular communications at L-band...
This work discusses the design of a 3-stacked GaAs HEMT test cell at 10 GHz. The series stacked topo...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
date of the first integrated circuit to 1971 which has seen the first microprocessor application, th...
Metal semiconductor field effect transistors (MESFET's) with 0.1 $\mu$m and 50 nm gate-lengths have ...
Metal semiconductor field effect transistors (MESFET's) with 0.1 $\mu$m and 50 nm gate-lengths have ...
Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer laye...
Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer laye...
The purpose of this thesis is to investigate the operation of GaAs field-effect transistors with par...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
This thesis describes the research activities that have been investigated for improving the 3rd orde...
The integration of power and low noise amplifiers on a single chip offers the opportunity to achieve...
Abstract—Excellent microwave performance and potential for low 1/f noise characteristics, GaAs high...
Three designs, a single‐stage, a parallel‐stage, and a two‐stage amplifier, for medium power monolit...
This paper presents a chip set operating at 3 V supply voltage for cellular communications at L-band...
This paper presents a chip set operating at 3 V supply voltage for cellular communications at L-band...
This work discusses the design of a 3-stacked GaAs HEMT test cell at 10 GHz. The series stacked topo...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
date of the first integrated circuit to 1971 which has seen the first microprocessor application, th...
Metal semiconductor field effect transistors (MESFET's) with 0.1 $\mu$m and 50 nm gate-lengths have ...
Metal semiconductor field effect transistors (MESFET's) with 0.1 $\mu$m and 50 nm gate-lengths have ...
Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer laye...
Comparisons have been made between the channel currents in GaAs hESFETs prepared on GaAs buffer laye...
The purpose of this thesis is to investigate the operation of GaAs field-effect transistors with par...