Structural phase transitions of GeTe are studied with the use of the ab initio pseudopotential density-functional method. Transition pathways and pressures for NaCl-to-CsCl structures are investigated considering three different paths, namely, the Watanabe, Toledano, and modified Buerger pathways. Structural and electronic properties of the phases are also studied near the transition pressures. Our calculations show that GeTe exhibits very complex transition behaviors at intermediate pressures around 20 GPa, implying the existence of mixed phases in this pressure range. It is found that the Te 4d orbitals require careful treatment to properly describe the structural and electronic properties of GeTe.open111716sciescopu
The high-pressure and low-temperature behaviour of the $\mathrm{GeSe_{x}Te_{1− x}}$ xsystem (x= 0, 0...
WOS: 000274180500003We present an ab initio molecular dynamics study of pressure-induced structural ...
The high-pressure and low-temperature behaviour of the $\mathrm{GeSe_{x}Te_{1− x}}$ xsystem (x= 0, 0...
We have investigated the pressure dependence of the static structure of liquid GeTe based on ab init...
We have investigated the pressure dependence of the static structure of liquid GeTe based on ab init...
International audiencePressure induced phase transitions in GeTe, a prototype phase change material ...
We investigated changes in the crystal structure of GeTe during its phase transition. Using density ...
First-principles evolutionary searches have been performed to systematically explore the high-pressu...
GeTe is a prototypical phase-change material employed in data storage devices. In this work, the ato...
GeTe is a prototypical phase-change material employed in data storage devices. In this work, the ato...
The high-pressure and low-temperature behaviour of the GeSexTe1−x system (x = 0, 0.2, 0.5, 0.75, 1) ...
The recent surge of interest in phase-change materials GeTe, Ge2Sb2Te5, and related compounds motiva...
Various strategies for thermoelectric material optimization have been widely studied and used for pr...
Total energy calculations based on density functional theory are performed for HgSe in the ambient a...
cited By 63International audienceThe full-potential linearized augmented plane wave method (FP-LAPW)...
The high-pressure and low-temperature behaviour of the $\mathrm{GeSe_{x}Te_{1− x}}$ xsystem (x= 0, 0...
WOS: 000274180500003We present an ab initio molecular dynamics study of pressure-induced structural ...
The high-pressure and low-temperature behaviour of the $\mathrm{GeSe_{x}Te_{1− x}}$ xsystem (x= 0, 0...
We have investigated the pressure dependence of the static structure of liquid GeTe based on ab init...
We have investigated the pressure dependence of the static structure of liquid GeTe based on ab init...
International audiencePressure induced phase transitions in GeTe, a prototype phase change material ...
We investigated changes in the crystal structure of GeTe during its phase transition. Using density ...
First-principles evolutionary searches have been performed to systematically explore the high-pressu...
GeTe is a prototypical phase-change material employed in data storage devices. In this work, the ato...
GeTe is a prototypical phase-change material employed in data storage devices. In this work, the ato...
The high-pressure and low-temperature behaviour of the GeSexTe1−x system (x = 0, 0.2, 0.5, 0.75, 1) ...
The recent surge of interest in phase-change materials GeTe, Ge2Sb2Te5, and related compounds motiva...
Various strategies for thermoelectric material optimization have been widely studied and used for pr...
Total energy calculations based on density functional theory are performed for HgSe in the ambient a...
cited By 63International audienceThe full-potential linearized augmented plane wave method (FP-LAPW)...
The high-pressure and low-temperature behaviour of the $\mathrm{GeSe_{x}Te_{1− x}}$ xsystem (x= 0, 0...
WOS: 000274180500003We present an ab initio molecular dynamics study of pressure-induced structural ...
The high-pressure and low-temperature behaviour of the $\mathrm{GeSe_{x}Te_{1− x}}$ xsystem (x= 0, 0...