Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop

GaInN/GaN light-emitting triodes having two anodes for promoting the injection of holes into the active region were fabricated and characterized. It was found that the anode-to-anode bias modulates not only the hole-injection efficiency but also the effective light-emitting area and hence the current density through the active region. As the anode-to-anode bias increases, the efficiency at the same current density increases, whereas the efficiency droop decreases substantially, indicating that the limited hole-injection efficiency is one of the dominant mechanisms responsible for the efficiency droop in GaN-based light-emitting diodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658388]open111516sciescopu