STRUCTURAL CHARACTERIZATION OF ALUMINUM FILMS DEPOSITED ON SPUTTERED-TITANIUM NITRIDE/SILICON SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION FROM DIMETHYLETHYLAMINE ALANE

Al films deposited on sputtered-TiN/Si substrate by metalorganic chemical vapor deposition (MOCVD) from dimethylethylamine alane (DMEAA) were characterized using x-ray diffraction (XRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The TiN film sputtered on the Si has a preferred orientation along the growth direction with the [111] of the film parallel to the Si[111]. Sputtering of the TiN film on the Si induced strains at the interface. The TiN/Si interface is flat while the Al/TiN interface is rough. There exist many dislocations at the Al/TiN interface. The Al2O3 phase was formed at the Al/TiN interface during the early stages of Al deposition. In the Al grains, there exist many tangled dislocations and a few Al2O3 particles. With increasing deposition time, the Al film surface roughness increases. (C) 1995 American Institute of Physics.open1115sciescopu