Add to ORKGEnergy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe
In this study the electronic structures and absorption coefficient for highly mismatched ZnTe1-xOx a...
Journal ArticleWe report the realization of a new mult-band-gap semiconductor. Zn1-yMnyOxTe1-x alloy...
Recently, low-cost, high efficiency solar cells have attracted tremendous interest for finding a ren...
Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers...
ZnTe doped with high concentrations of oxygen has been proposed in previous works as an intermediate...
The isoelectronic doping of ZnTe with oxygen leads to deep levels on which carriers recombine radiat...
© 2014 IEEE. ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation i...
ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate ba...
[EN] This work reports on modeling IB (intermediate band) solar cells based on ZnTe:O semiconductor ...
The O-doped ZnTe (ZnTe1−xOx) alloys present induce levels through O doping into the host semiconduct...
The demand for high efficiency intermediate band (IB) solar cells is driving efforts in producing hi...
It has long been recognized that the introduction of a narrow band of states in a semiconductor band...
Group II-VI and III-V highly mismatched alloys are promising material systems in the application of ...
Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via ...
An intermediated-band in Cr-doped ZnTe (ZnTe:Cr) thin films was analyzed and high performance interm...
In this study the electronic structures and absorption coefficient for highly mismatched ZnTe1-xOx a...
Journal ArticleWe report the realization of a new mult-band-gap semiconductor. Zn1-yMnyOxTe1-x alloy...
Recently, low-cost, high efficiency solar cells have attracted tremendous interest for finding a ren...
Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers...
ZnTe doped with high concentrations of oxygen has been proposed in previous works as an intermediate...
The isoelectronic doping of ZnTe with oxygen leads to deep levels on which carriers recombine radiat...
© 2014 IEEE. ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation i...
ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate ba...
[EN] This work reports on modeling IB (intermediate band) solar cells based on ZnTe:O semiconductor ...
The O-doped ZnTe (ZnTe1−xOx) alloys present induce levels through O doping into the host semiconduct...
The demand for high efficiency intermediate band (IB) solar cells is driving efforts in producing hi...
It has long been recognized that the introduction of a narrow band of states in a semiconductor band...
Group II-VI and III-V highly mismatched alloys are promising material systems in the application of ...
Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via ...
An intermediated-band in Cr-doped ZnTe (ZnTe:Cr) thin films was analyzed and high performance interm...
In this study the electronic structures and absorption coefficient for highly mismatched ZnTe1-xOx a...
Journal ArticleWe report the realization of a new mult-band-gap semiconductor. Zn1-yMnyOxTe1-x alloy...
Recently, low-cost, high efficiency solar cells have attracted tremendous interest for finding a ren...