Add to ORKGSelective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2]
This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. Th...
A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong p...
This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. Th...
Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) ...
The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective are...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
This work reports on the morphology control of the selective area growth of GaN-based nanostructures...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
International audienceThe aim of this work is to provide an overview on the recent advances in the s...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
In this work, the mechanisms regulating the selective area growth (SAG) of GaN-based nanostructures ...
•Self- assembled Ga(In)N Nanorods and Nanostructures •Ordered growth of GaN Nanorods: masks issues ...
La nano-structuration de matériaux semiconducteurs à grand gap à base de GaN fait l'objet d'un très ...
This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. Th...
A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong p...
This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. Th...
Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) ...
The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective are...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
This work reports on the morphology control of the selective area growth of GaN-based nanostructures...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
International audienceThe aim of this work is to provide an overview on the recent advances in the s...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
In this work, the mechanisms regulating the selective area growth (SAG) of GaN-based nanostructures ...
•Self- assembled Ga(In)N Nanorods and Nanostructures •Ordered growth of GaN Nanorods: masks issues ...
La nano-structuration de matériaux semiconducteurs à grand gap à base de GaN fait l'objet d'un très ...
This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. Th...
A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong p...
This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. Th...