Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy

The nitrogen distribution in GaAsNGaAs quantum wells _QWs_ grown by molecular beam epitaxy is studied on the atomic scale by cross-sectional scanning tunneling microscopy. No nitrogen clustering is observed in the range of N contents studied _between 1.0% and 2.5%, as measured by counting the individual N atoms inside the QW_. Nevertheless, the upper interface roughness increases with the amount of N. A residual N concentration in the GaAs barriers is found, which strongly increases with the amount of N in the QW