Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decompo...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
Annealing experiments were carried out on gallium nitride layers, which were grown on sapphire throu...
GaN was grown by molecular beam epitaxy in an effort to determine nucleation and growth conditions w...
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposu...
Growth of GaN by molecular beam epitaxy is ultimately limited by thermal decomposition. Factors infl...
Gallium (Ga) surfacedesorption behavior was investigated using reflection high-energy electron diffr...
A reduced rate for growth of GaN by plasma-assisted molecular beam epitaxy often limits growth to te...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted mo...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
Annealing experiments were carried out on gallium nitride layers, which were grown on sapphire throu...
GaN was grown by molecular beam epitaxy in an effort to determine nucleation and growth conditions w...
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposu...
Growth of GaN by molecular beam epitaxy is ultimately limited by thermal decomposition. Factors infl...
Gallium (Ga) surfacedesorption behavior was investigated using reflection high-energy electron diffr...
A reduced rate for growth of GaN by plasma-assisted molecular beam epitaxy often limits growth to te...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
International audienceWe investigated the partial decomposition of GaN layers grown in an atmospheri...
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted mo...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
Annealing experiments were carried out on gallium nitride layers, which were grown on sapphire throu...
GaN was grown by molecular beam epitaxy in an effort to determine nucleation and growth conditions w...