Epitaxial growth of SrTiO₃ thin film on Si by laser molecular beam epitaxy

SrTiO₃ thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO₃ was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO₃/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO₃ and the interfacial structure. Electrical measurements revealed that the SrTiO₃ film was highly resistive.Department of Applied PhysicsAuthor name used in this publication: X. Y. ZhouAuthor name used in this publication: J. MiaoAuthor name used in this publication: J. Y. DaiAuthor name used in this publication: H. L. W. ChanAuthor name used in this publication: C. L. ChoyAuthor name used in this publication: Y. Wan